2N03L Search Results

2N03L05

Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05
Contextual Info: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 5 mΩ ID 80 A P-TO263-3-2 • Low on-resistance RDS(on) P-TO220-3-1 • Excellent Gate Charge x RDS(on) product (FOM)

2N03L06

Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
Contextual Info: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m
ID 80

SPB42N03S2L-15

Abstract: SPP42N03S2L-15
Contextual Info: SPP42N03S2L-15 SPB42N03S2L-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature 30 VDS • N-Channel RDS on • Enhancement mode P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) 12.4 mΩ 42 ID • Logic Level V A P-TO220-3-1

Contextual Info: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 30 V R DS on 10 m
ID 30 A P- TO252 -3-11
Low On-Resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance

2N03L10

Abstract: marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10
Contextual Info: IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 10 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11

2N03L20

Abstract: 2n03l ANPS071E IPD30N03S2L-20 PG-TO252-3-11
Contextual Info: IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 20 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11

TO252 thermal character

Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2n03l03

Abstract: 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 SPP80N03S2L-03 INFINEON PART MARKING to263
Contextual Info: SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.8 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2

2N03L10

Abstract: ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

Contextual Info: IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 6.7 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11

1412G

Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature

2N03L10

Abstract: 2N03L
Contextual Info: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P- TO251 -3-1
Superior thermal resistance

2n03l08

Abstract: P-TO252 SPD30N03S2L-08 max2958
Contextual Info: Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS on product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated

2n03l

Abstract: 2n03l03 2N03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4259
Contextual Info: SPP80N03S2L-03 SPB80N03S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on max. SMD version 2.8 mΩ ID 80 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM)

2n03l

Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2N03L20

Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
Contextual Info: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated

2N03L05

Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05 SMD marking code 55A
Contextual Info: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) 5.2 m
ID 80 A P-TO263-3-2

2N03L10

Abstract: P-TO252 SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance

2N03L13

Abstract: Datasheet 2N03L13 SPB42N03S2L-13 2n03l D6032 smd TRANSISTOR code marking 8K SPI42N03S2L-13 SPP42N03S2L-13 ANPS071E INFINEON PART MARKING to263
Contextual Info: SPI42N03S2L-13 SPP42N03S2L-13,SPB42N03S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 • Enhancement mode R DS on ID • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 V 12.9 mΩ 42 P- TO263 -3-2 A P- TO220 -3-1

2N03L08

Abstract: Q67042-S4037 2N03L08 2N03L08 ANPS071E SPB73N03S2L-08 SPI73N03S2L-08 SPP73N03S2L-08
Contextual Info: SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on 8.4 mΩ • Logic Level ID 73 A • Excellent Gate Charge x RDS(on) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1

2N03L10

Abstract: TO252 thermal character TO252 rthjc ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A • Low On-Resistance R DS(on) PG-TO252-3 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

2N03L13

Abstract: 2N03L SPB42N03S2L-13 diode d21 Datasheet 2N03L13 INFINEON PART MARKING TRANSISTOR SMD MARKING CODE 42 SPI42N03S2L-13 SPP42N03S2L-13 F42A
Contextual Info: SPI42N03S2L-13 SPP42N03S2L-13 OptiMOS Power-Transistor SPB42N03S2L-13 Product Summary Features • N-channel • Enhancement mode V DS 30 V R DS on ,max 12.9 mΩ ID 42 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance

2N03L20

Contextual Info: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 20 mΩ •Logic Level ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature

2N03L13

Abstract: M3024
Contextual Info: SPI42N03S2L-13 SPP42N03S2L-13,SPB42N03S2L-13 OptiMOS Buck converter series Product Summary Feature 30 • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • Excellent Gate Charge x RDS(on) P- TO262 -3-1 V 12.9 mΩ 42 P- TO263 -3-2 A P- TO220 -3-1