TO252 thermal character
Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature
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spd30n03s2l-07pg-to252-3spd30n03s2l-07g2n03l07+5sspd30n03s2l-07gto252 thermal characteranps071emax2958f1816
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Contextual Info: IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 6.7 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11
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1412G
Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature
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spd30n03s2l-07p-to252-3-11q67042-s40912n03l07+3pg-to252-31412ganps071e
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2n03l
Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature
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spd30n03s2l-07pg-to252-3spd30n03s2l-07g2n03l07+6sspd30n03s2l-07g2n03lanps071edt smd2n03spd30n
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smd transistor marking 91A
Abstract: smd marking code 91a 2N03L07 P-TO252 SPD30N03S2L-07
Contextual Info: SPD30N03S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS on product (FOM) VDS 30 V RDS(on) 6.7 m ID 30 A P-TO252 Superior thermal resistance 175°C operating temperature
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spd30n03s2l-07p-to252q67042-s40312n03l07+2smd transistor marking 91asmd marking code 91a
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2n03l
Abstract: SPD30N03S2L-07 2N03 2N03L07 spd30n
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3-11 • Superior thermal resistance • 175°C operating temperature
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IPD30N03S2L-07
Abstract: ANPS071E PG-TO252-3-11 smd 103 2N03L07
Contextual Info: IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 6.7 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11
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ANPS071E
Abstract: SPD30N03S2L-07 E30R
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature
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S2530
Contextual Info: SPD30N03S2L-07 OptiMOS Buck converter series • N-Channel Product Summary VDS 30 V • Enhancement mode RDS on 6.7 mΩ • Logic Level ID 30 A Feature • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature
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Diode smd code 30a
Abstract: ANPS071E PG-TO252-3-11 SPD30N03S2L-07 2N03L07
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3-11 • Superior thermal resistance • 175°C operating temperature
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spd30n03s2l-07pg-to252-3-11q67042-s40912n03l07+2diode smd code 30aanps071e
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Contextual Info: SPD30N03S2L-07 G Opt iMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A PG-TO252-3 • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature
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