SPD30N Search Results

SPU30N03L

Contextual Info: SPD30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.012 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated

Contextual Info: Target data sheet SPD30N08S2L-24 SIPMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 75 V • Enhancement mode Drain-source on-state resistance RDS on 24 mΩ • Avalanche rated Continuous drain current ID 25 A • Logic Level

Contextual Info: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 30 V R DS on 10 m
ID 30 A P- TO252 -3-11
Low On-Resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance

TO252 thermal character

Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2N0615

Abstract: INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 SPD30N06S2-15
Contextual Info: SPD30N06S2-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P-TO252 • dv/dt rated Type SPD30N06S2-15 Package

2N03L10

Abstract: ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

2N0615

Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
Contextual Info: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N06S2-15 Package Ordering Code

1412G

Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature

2N0822

Abstract: SPD30N08S2-22
Contextual Info: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature V m
21.5 30 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413

2n06l23

Contextual Info: SPD30N06S2L-23 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 23 mΩ ID 30 A • Enhancement mode • Logic Level • 175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type Package

Contextual Info: Preliminary data SPD30N06S2L-13 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 13 mΩ Continuous drain current ID 30 A Enhancement mode • Avalanche rated

2n06l23

Contextual Info: SPD30N06S2L-23 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 55 V R DS on 23 m
ID 30 A P- TO252 -3-11
175°C operating temperature
Avalanche rated
dv/dt rated Type SPD30N06S2L-23 Package Ordering Code

2n03l08

Abstract: P-TO252 SPD30N03S2L-08 max2958
Contextual Info: Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS on product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated

2n03l

Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2N03L20

Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
Contextual Info: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated

2N03L10

Abstract: P-TO252 SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance

2N08L21

Contextual Info: SPD30N08S2L-21 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel R DS on
Enhancement mode ID
Logic Level V m
20.5 30 A P- TO252 -3-11
175°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching buck converter

2N0822

Abstract: BSPD30N08S2-22 2n08 ANPS071E SPD30N08S2-22 INFINEON PART MARKING to252
Contextual Info: SPD30N08S2-22 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 75 ID • 175°C operating temperature V 21.5 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N08S2-22 Package Ordering Code

2N08L21

Abstract: BSPD30N08S2L-21 SPD30N08S2L-21 ANPS071E 54AAT
Contextual Info: SPD30N08S2L-21 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 • Enhancement mode R DS on ID • Logic Level V 20.5 mΩ 30 • 175°C operating temperature A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD30N08S2L-21

2N03L10

Abstract: TO252 thermal character TO252 rthjc ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A • Low On-Resistance R DS(on) PG-TO252-3 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

2N08L21

Abstract: SPD30N08S2L-21 Q67060-S7414
Contextual Info: Preliminary data SPD30N08S2L-21 OptiMOS =Power-Transistor Product Summary Feature 75 VDS • N-Channel RDS on • Enhancement mode 20.5 mΩ 30 ID • Logic Level V A P-TO252-3-1 •=175°C operating temperature • Avalanche rated • dv/dt rated Type

2N03L20

Contextual Info: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 20 mΩ •Logic Level ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature

2n06l23

Abstract: 50h60
Contextual Info: Preliminary data SPD30N06S2L-23 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 23 mΩ Continuous drain current ID 30 A Enhancement mode • Avalanche rated

2N03L10

Contextual Info: SPD30N03S2L-10 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A PG-TO252-3 • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance