2N03 Search Results

TO-18 amps pnp transistor

Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
Contextual Info: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A JAN2N3250A JAN2N3251A JANTX2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251

Contextual Info: Freescale Semiconductor Mask Set Errata 2N03G Rev. 15 APR 2013 Mask Set Errata for Mask 2N03G Introduction This report applies to mask 2N03G for these products: • KINETIS Errata ID Errata Title 5706 FTFx: MCU security is inadvertently enabled secured if a mass erase is executed when the flash blocks/

Contextual Info: Freescale Semiconductor Mask Set Errata 2N03G Rev 15 AUG 2013 Mask Set Errata for Mask 2N03G Introduction This report applies to mask 2N03G for these products: • KINETIS Errata ID Errata Title 5706 FTFx: MCU security is inadvertently enabled secured if a mass erase is executed when the flash blocks/

2N03L05

Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05
Contextual Info: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 5 mΩ ID 80 A P-TO263-3-2 • Low on-resistance RDS(on) P-TO220-3-1 • Excellent Gate Charge x RDS(on) product (FOM)

SMD DIODE 615 200A

Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
Contextual Info: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m
ID 80 A P-TO263-3-2 Type

2N03L06

Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
Contextual Info: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m
ID 80

JAN2N4033

Abstract: JANTX2N2907 2N390E 2N4033 HS2907A
Contextual Info: Microsemi Microsemi Division Package Outline kype iif PNP 2N2907A HS2907A JAN2N2907A JANTX2N2907A JANTXV2N2907 HS5087 HS3904 HS3906 2N4029 JAN2N4029 JANTX2N4029 JANTXV2N4029 2N390E 2N4403 PN2907A 2N3811L JANTX2N3810 JANTX2N3810L JANTX2N3811 JANTX2N3811L JANTXV2N3810

SPB42N03S2L-15

Abstract: SPP42N03S2L-15
Contextual Info: 2N03S2L-15 2N03S2L-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature 30 VDS • N-Channel RDS on • Enhancement mode P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) 12.4 mΩ 42 ID • Logic Level V A P-TO220-3-1

Contextual Info: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 30 V R DS on 10 m
ID 30 A P- TO252 -3-11
Low On-Resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance

2N03L10

Abstract: marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10
Contextual Info: IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 10 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11

2N03L20

Abstract: 2n03l ANPS071E IPD30N03S2L-20 PG-TO252-3-11
Contextual Info: IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 20 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11

TO252 thermal character

Abstract: ANPS071E SPD30N03S2L-07 SPD30N03S2L-07G max2958 f1816
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2n03l03

Abstract: 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 SPP80N03S2L-03 INFINEON PART MARKING to263
Contextual Info: SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.8 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2

2N03L10

Abstract: ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

1412G

Abstract: ANPS071E P-TO252-3-11 SPD30N03S2L-07
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-3-11 • Superior thermal resistance • 175°C operating temperature

2n0308

Abstract: C1904
Contextual Info: SPU30N03S2-08 Preliminary data OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 RDS on 8.2 m
ID 30 A V P-TO251 Type Package Ordering Code Marking SPU30N03S2-08 P-TO251 Q67042-S4140

2N03L10

Abstract: 2N03L
Contextual Info: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P- TO251 -3-1
Superior thermal resistance

2N0308

Contextual Info: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 8.2 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 •Superior thermal resistance

2n03l08

Abstract: P-TO252 SPD30N03S2L-08 max2958
Contextual Info: Preliminary data SPD30N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel · Enhancement mode · Logic Level · Excellent Gate Charge x RDS on product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated

Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to

2n03l

Abstract: 2n03l03 2N03 SPB80N03S2L-03 SPP80N03S2L-03 Q67040-S4259
Contextual Info: SPP80N03S2L-03 SPB80N03S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on max. SMD version 2.8 mΩ ID 80 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM)

2n03l10

Abstract: SPB73N03S2L-10 SPP73N03S2L-10
Contextual Info: SPP73N03S2L-10 SPB73N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 8 mΩ ID 73 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) P-TO220-3-1 •=Superior thermal resistance

2n03l

Abstract: PG-TO252-3 ANPS071E 2N03L07 DT SMD 2N03 spd30n
Contextual Info: SPD30N03S2L-07 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3 • Superior thermal resistance • 175°C operating temperature

2N03L20

Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
Contextual Info: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated