2N03L10 Search Results

Contextual Info: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 30 V R DS on 10 m
ID 30 A P- TO252 -3-11
Low On-Resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance

2N03L10

Abstract: marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10
Contextual Info: IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 10 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11

2N03L10

Abstract: ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

2N03L10

Abstract: 2N03L
Contextual Info: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P- TO251 -3-1
Superior thermal resistance

2n03l10

Abstract: SPB73N03S2L-10 SPP73N03S2L-10
Contextual Info: SPP73N03S2L-10 SPB73N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 8 mΩ ID 73 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) P-TO220-3-1 •=Superior thermal resistance

2N03L10

Abstract: P-TO252 SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance

2N03L10

Abstract: TO252 thermal character TO252 rthjc ANPS071E SPD30N03S2L-10
Contextual Info: SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A • Low On-Resistance R DS(on) PG-TO252-3 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

2N03L10

Contextual Info: SPD30N03S2L-10 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A PG-TO252-3 • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

Contextual Info: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance

2N03L10

Abstract: 2N03L
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 10 mΩ •Logic Level ID 30 A •N-Channel •Low On-Resistance RDS(on) P- TO252 -3-11 •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance

2n03l10

Abstract: 2N03L
Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P-TO252-3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance

2N03L

Abstract: 2N03L10 SPU30N03S2L-10
Contextual Info: SPU30N03S2L-10 Preliminary data OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P-TO251
Superior thermal resistance 175°C operating temperature

2N03L10

Abstract: SPU30N03S2L-10
Contextual Info: SPU30N03S2L-10 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P-TO251
Superior thermal resistance 175°C operating temperature

2N03

Contextual Info: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) PG-TO252-3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance