12N60 Search Results

12N60 Datasheets (11)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
12N60	Unisonic Technologies	12 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF	236.51KB	6
12N-60	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60CD1	IXYS	HiPerFAST IGBT Lightspeed	Original	PDF	60.61KB	2
12N60D1	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60D1C	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60D1D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N-60F	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N-60M	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1

12N60 Price and Stock

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onsemi FDPF12N60NZ Power MOSFET N-Channel UniFETTM II 600 V 12 A 650 mΩ TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FDPF12N60NZ		2,000			1 - 10 - 100 $1.59 1000 $1.19 10000 $1.15	Buy Now
Avnet Americas	FDPF12N60NZ	Tube	5,900	14 Weeks	50	1 - 10 - 100 $1.16 1000 $1.06 10000 $1.06	Buy Now
Mouser Electronics	FDPF12N60NZ		12,157			1 $3.04 10 $1.87 100 $1.50 1000 $1.25 10000 $1.25	Buy Now
Newark ()	FDPF12N60NZ	Bulk	8,721		1	1 $4.15 10 $2.60 100 $2.23 1000 $2.14 10000 $2.05	Buy Now
	FDPF12N60NZ	Bulk			200	1 - 10 - 100 - 1000 $1.73 10000 $1.44	Buy Now
	FDPF12N60NZ	Bulk			50	1 - 10 - 100 $2.19 1000 $1.85 10000 $1.78	Buy Now
TME	FDPF12N60NZ		959		1	1 $2.11 10 $1.66 100 $1.48 1000 $1.48 10000 $1.48	Buy Now

Ameya Holding Limited	FDPF12N60NZ		16,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	FDPF12N60NZ			14 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDPF12N60NZ			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDPF12N60NZ			16 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHF12N60E-GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHF12N60E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF12N60E-GE3	Tape & Reel		45 Weeks	1,000	1 - 10 - 100 - 1000 $1.30 10000 $1.17	Buy Now
Mouser Electronics	SIHF12N60E-GE3		4,538			1 $3.76 10 $1.90 100 $1.72 1000 $1.40 10000 $1.39	Buy Now
Newark	SIHF12N60E-GE3	Bulk			1	1 $4.23 10 $2.93 100 $2.19 1000 $1.79 10000 $1.72	Buy Now
TTI	SIHF12N60E-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.40 10000 $1.40	Buy Now
TME	SIHF12N60E-GE3				1	1 $3.50 10 $1.92 100 $1.61 1000 $1.52 10000 $1.52	Get Quote

EBV Elektronik	SIHF12N60E-GE3			39 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NGTG12N60TF1G IGBT, N-Channel, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L N-Channel IGBT, 600V, 12A, VCE(sat)=1.4V - Rail/Tube (Alt: NGTG12N60TF1G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NGTG12N60TF1G	Tube			930	1 - 10 - 100 - 1000 $0.71 10000 $0.67	Buy Now
Rochester Electronics	NGTG12N60TF1G		267		1	1 - 10 - 100 $1.19 1000 $0.99 10000 $0.88	Buy Now
Flip Electronics	NGTG12N60TF1G		690			1 $0.55 10 $0.55 100 $0.55 1000 $0.55 10000 $0.55	Get Quote
Vishay Intertechnologies SIHB12N60ET1-GE3 N-CHANNEL 600V - Bulk (Alt: SIHB12N60ET1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHB12N60ET1-GE3	Bulk		45 Weeks	800	1 - 10 - 100 - 1000 $1.01 10000 $0.99	Buy Now
TTI	SIHB12N60ET1-GE3	Reel			800	1 - 10 - 100 - 1000 $1.03 10000 $1.03	Buy Now
TME	SIHB12N60ET1-GE3				1	1 $2.00 10 $1.80 100 $1.43 1000 $1.28 10000 $1.28	Get Quote
EBV Elektronik	SIHB12N60ET1-GE3			39 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHP12N60E-E3 - Rail/Tube (Alt: SIHP12N60E-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHP12N60E-E3	Tube		45 Weeks	1,000	1 - 10 - 100 - 1000 $1.29 10000 $1.21	Buy Now
Mouser Electronics	SIHP12N60E-E3		2,650			1 $3.76 10 $2.45 100 $1.72 1000 $1.32 10000 $1.25	Buy Now
TTI	SIHP12N60E-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.32 10000 $1.32	Buy Now

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12N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12n60c Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60c o-263 o-220 728b1 +4transistor 12n60c ixga 12n60c ixga12n60c ixgp12n60c	PDF
Contextual Info: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	12n60c isoplus247tm	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 qw-r502-170	PDF
Contextual Info: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	12n60cd1	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60k-mt qw-r502-b06	PDF
12N60B Contextual Info: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	12n60b o-247	PDF
12N60CD1 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600	Original	12n60cd1 o-263 o-220	PDF
12N60C Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	12n60c o-247	PDF
12n60b Abstract: 12n60bd1 12N60BD Contextual Info: IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	12n60bd1 o-220 12n60b 12n60bd	PDF
Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60c o-263 o-220 728b1	PDF
12n60a Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 12n60l qw-r502-170 12n60a +5utc12n60 12n-60a 12n60b 12n60-a 12n60-b	PDF
12n60c Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB Contextual Info: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS 12N60C3DR, 12N60C3DR, 12N60C3DRS CT ODU ODUCT	Original	g12n6 12n60 s12n6 hgtg12n60c3dr +10hgtp12n60c3dr hgt1s12n60c3drs gtg12n 12n60c 12n60c3d g12n60c3d s12n-6 12n60c3 12n60 dc to-247ab	PDF
12N60CD1 Abstract: 12n60c Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	12n60cd1 728b1 12n60c	PDF
12n60b Abstract: servo motors IXGH12N60B dc motor high torque 12N60 12N60-B Contextual Info: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60b servo motors ixgh12n60b dc motor high torque +212n60 12n60-b	PDF

IXGA 12N60C Contextual Info: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM	OCR Scan	12n60c o-263 o-220 ixga 12n60c	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	12n60bd1 o-247	PDF
Contextual Info: Low VCE sat IGBT with Diode IXSA 12N60AU1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12n60au1	PDF
Contextual Info: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12n60c isoplus247tm 728b1	PDF
12N60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 qw-r502-170 12n60l	PDF
12n60c Abstract: transistor 12n60c 98503B 12N60 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	12n60c o-247 728b1 transistor 12n60c +298503b 12n60	PDF
12n60b Abstract: 12N60-B 98909 Contextual Info: IXGA 12N60B IXGP 12N60B HiPerFASTTM IGBT VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	12n60b o-220 with020 728b1 +212n60-b 98909	PDF
12n60 dc Abstract: 12n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 12n60l 12n60g qw-r502-170 +112n60 dc	PDF
IGBT g Abstract: TO263AA Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60cd1 o-220 o-263 igbt g +1to263aa	PDF
Contextual Info: n ix Y S L o w V ^ IG B T with Diode IXSA 12N60AU1 VCES IC25 VCE sat 600 V 24 A 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions TO-263AA Tj =25°Cto150°C 600 V VC0R Tj =25°C to150°C ;R GE=1 MQ 600 V VGES Continuous ±20	OCR Scan	12n60au1 cto150 to150 o-263aa	PDF

12N60 Search Results

12N60 Datasheets (11)

12N60 Price and Stock

onsemi FDPF12N60NZ

Vishay Intertechnologies SIHF12N60E-GE3

onsemi NGTG12N60TF1G

Vishay Intertechnologies SIHB12N60ET1-GE3

Vishay Intertechnologies SIHP12N60E-E3

12N60 Datasheets Context Search

12n60c

12N60B

12N60CD1

12N60C

12n60b

12n60a

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12N60CD1

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IXGA 12N60C

12N60l

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12n60b

12n60 dc

IGBT g