12N60 Search Results

12N60 Datasheets (12)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
12N60	Unisonic Technologies	12 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF	236.51KB	6
12N-60	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60CD1	IXYS	HiPerFAST IGBT Lightspeed	Original	PDF	60.61KB	2
12N60D1	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60D1C	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60D1D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N-60F	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N-60M	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
MDD12N60F	Microdiode Semiconductor (MDD)	Power Field-Effect Transistor	Original	PDF

12N60 Price and Stock

Filter by Manufacturer

Select Manufacturer


onsemi FDPF12N60NZ Power MOSFET N-Channel UniFETTM II 600 V 12 A 650 mΩ TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FDPF12N60NZ		2,000			1 - 10 - 100 $1.59 1000 $1.19 10000 $1.15	Buy Now
Avnet Americas	FDPF12N60NZ	Tube	5,900	14 Weeks	50	1 - 10 - 100 $1.16 1000 $1.06 10000 $1.06	Buy Now
Newark ()	FDPF12N60NZ	Bulk	8,721		1	1 $4.15 10 $2.60 100 $2.23 1000 $2.14 10000 $2.05	Buy Now
	FDPF12N60NZ	Bulk			200	1 - 10 - 100 - 1000 $1.73 10000 $1.44	Buy Now
	FDPF12N60NZ	Bulk			50	1 - 10 - 100 $2.19 1000 $1.85 10000 $1.78	Buy Now
TME	FDPF12N60NZ		959		1	1 $2.12 10 $1.67 100 $1.49 1000 $1.49 10000 $1.49	Buy Now
Avnet Asia	FDPF12N60NZ			14 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	FDPF12N60NZ			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDPF12N60NZ			16 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FQP12N60C - Rail/Tube (Alt: FQP12N60C)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQP12N60C	Tube			1,000	1 - 10 - 100 - 1000 $1.15 10000 $1.11	Get Quote
Rochester Electronics	FQP12N60C		817		1	1 - 10 - 100 $1.41 1000 $1.17 10000 $1.04	Buy Now
Flip Electronics	FQP12N60C		869			1 $0.94 10 $0.94 100 $0.94 1000 $0.94 10000 $0.94	Get Quote
onsemi HGTP12N60C3D - Rail/Tube (Alt: HGTP12N60C3D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HGTP12N60C3D	Tube			800	1 - 10 - 100 - 1000 $2.01 10000 $1.86	Get Quote
Flip Electronics	HGTP12N60C3D		800			1 $1.06 10 $1.06 100 $1.06 1000 $1.06 10000 $1.06	Get Quote
STMicroelectronics STU12N60M2 - Rail/Tube (Alt: STU12N60M2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STU12N60M2	Tube		29 Weeks, 1 Days	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics	STU12N60M2				1	1 $2.44 10 $1.57 100 $1.07 1000 $0.89 10000 $0.89	Buy Now
EBV Elektronik	STU12N60M2			53 Weeks	75	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STL12N60M6 Transistor MOSFET N-CH 600V 6.4A 8-Pin PowerFLAT T/R - Tape and Reel (Alt: STL12N60M6)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STL12N60M6	Tape & Reel		36 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now
Newark ()	STL12N60M6	Tape & Reel			100	1 - 10 - 100 $1.50 1000 $1.19 10000 $1.14	Buy Now
	STL12N60M6	Cut Tape			1	1 $2.98 10 $2.98 100 $1.50 1000 $1.19 10000 $1.14	Buy Now
Avnet Silica	STL12N60M6			25 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 12N60 price and stock on Findchips.com

12N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12n60c Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60c o-263 o-220 728b1 +4transistor 12n60c ixga 12n60c ixga12n60c ixgp12n60c	PDF
Contextual Info: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	12n60c isoplus247tm	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 qw-r502-170	PDF
Contextual Info: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	12n60cd1	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60k-mt qw-r502-b06	PDF
12N60B Contextual Info: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	12n60b o-247	PDF
12N60CD1 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600	Original	12n60cd1 o-263 o-220	PDF
12N60C Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	12n60c o-247	PDF
12n60b Abstract: 12n60bd1 12N60BD Contextual Info: IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	12n60bd1 o-220 12n60b 12n60bd	PDF
Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60c o-263 o-220 728b1	PDF
12n60a Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 12n60l qw-r502-170 12n60a +5utc12n60 12n-60a 12n60b 12n60-a 12n60-b	PDF
12n60c Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB Contextual Info: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS 12N60C3DR, 12N60C3DR, 12N60C3DRS CT ODU ODUCT	Original	g12n6 12n60 s12n6 hgtg12n60c3dr +10hgtp12n60c3dr hgt1s12n60c3drs gtg12n 12n60c 12n60c3d g12n60c3d s12n-6 12n60c3 12n60 dc to-247ab	PDF
12N60CD1 Abstract: 12n60c Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	12n60cd1 728b1 12n60c	PDF
12n60b Abstract: servo motors IXGH12N60B dc motor high torque 12N60 12N60-B Contextual Info: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60b servo motors ixgh12n60b dc motor high torque +212n60 12n60-b	PDF

IXGA 12N60C Contextual Info: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM	OCR Scan	12n60c o-263 o-220 ixga 12n60c	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	12n60bd1 o-247	PDF
Contextual Info: Low VCE sat IGBT with Diode IXSA 12N60AU1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12n60au1	PDF
Contextual Info: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12n60c isoplus247tm 728b1	PDF
12N60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 qw-r502-170 12n60l	PDF
12n60c Abstract: transistor 12n60c 98503B 12N60 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	12n60c o-247 728b1 transistor 12n60c +298503b 12n60	PDF
12n60b Abstract: 12N60-B 98909 Contextual Info: IXGA 12N60B IXGP 12N60B HiPerFASTTM IGBT VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	12n60b o-220 with020 728b1 +212n60-b 98909	PDF
12n60 dc Abstract: 12n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12n60 12n60l 12n60g qw-r502-170 +112n60 dc	PDF
IGBT g Abstract: TO263AA Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12n60cd1 o-220 o-263 igbt g +1to263aa	PDF
Contextual Info: n ix Y S L o w V ^ IG B T with Diode IXSA 12N60AU1 VCES IC25 VCE sat 600 V 24 A 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions TO-263AA Tj =25°Cto150°C 600 V VC0R Tj =25°C to150°C ;R GE=1 MQ 600 V VGES Continuous ±20	OCR Scan	12n60au1 cto150 to150 o-263aa	PDF

12N60 Search Results

12N60 Datasheets (12)

12N60 Price and Stock

onsemi FDPF12N60NZ

onsemi FQP12N60C

onsemi HGTP12N60C3D

STMicroelectronics STU12N60M2

STMicroelectronics STL12N60M6

12N60 Datasheets Context Search

12n60c

12N60B

12N60CD1

12N60C

12n60b

12n60a

12n60c

12N60CD1

12n60b

IXGA 12N60C

12N60l

12n60c

12n60b

12n60 dc

IGBT g