12N60 Search Results

12N60 Datasheets (16)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
12N60	Unisonic Technologies	12 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF	236.51KB	6
12N-60	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60CD1	IXYS	HiPerFAST IGBT Lightspeed	Original	PDF	60.61KB	2
12N60D1	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60D1C	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N60D1D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N-60F	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N-60M	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N60A	AK Semiconductor	12A 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.5 ohm at VGS = 10V, available in TO-220F and TO-220C packages, featuring high dv/dt capability and 100% avalanche tested performance.	Original	PDF
MDD12N60F	Microdiode Semiconductor (MDD)	600V N-Channel Enhancement Mode MOSFET, VDS 600V, ID(Tc=25°C) 12A, RDS(on),max 0.75Ω@VGS=10V, Qg,typ 40.8nC, TO-220F-3L.	Original	PDF
JMPF12N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 12A N-channel enhancement mode power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching, PWM applications, and power management.	Original	PDF

JMPC12N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 12A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching and power management applications.	Original	PDF
SLF12N60C	Maplesemi	12.0A, 600V N-channel MOSFET with RDS(on) of 0.51 ohm at VGS = 10V, low gate charge of 44.7nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high efficiency power supplies and active power factor correction.	Original	PDF

12N60 Price and Stock

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Rochester Electronics LLC HGTP12N60A4D IGBT 600V 54A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP12N60A4D	Bulk	76,266		145	1 - 10 - 100 - 1000 $2.06 10000 $2.06	Buy Now
Rochester Electronics LLC FQA12N60 MOSFET N-CH 600V 12A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQA12N60	Tube	9,750		167	1 - 10 - 100 - 1000 $1.80 10000 $1.80	Buy Now
STMicroelectronics STD12N60M2 MOSFET N-CHANNEL 600V 9A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STD12N60M2	Digi-Reel	7,097		1	1 $1.94 10 $1.24 100 $0.83 1000 $0.62 10000 $0.62	Buy Now
	STD12N60M2	Cut Tape	7,097		1	1 $1.94 10 $1.24 100 $0.83 1000 $0.62 10000 $0.62	Buy Now
	STD12N60M2	Tape & Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.50	Buy Now
Mouser Electronics	STD12N60M2					1 $1.94 10 $1.24 100 $0.83 1000 $0.61 10000 $0.54	Get Quote
TME	STD12N60M2		5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.61	Buy Now
Avnet Silica	STD12N60M2			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STD12N60M2		5,000	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STD12N60DM6 MOSFET N-CH 600V 10A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STD12N60DM6	Cut Tape	2,357		1	1 $2.83 10 $1.83 100 $1.26 1000 $1.04 10000 $1.04	Buy Now
	STD12N60DM6	Digi-Reel	2,357		1	1 $2.83 10 $1.83 100 $1.26 1000 $1.04 10000 $1.04	Buy Now
Mouser Electronics	STD12N60DM6		2,369			1 $2.65 10 $1.78 100 $1.27 1000 $0.98 10000 $0.92	Buy Now
Newark	STD12N60DM6	Bulk	2,430		1	1 $3.21 10 $2.28 100 $1.74 1000 $1.37 10000 $1.37	Buy Now
Avnet Silica	STD12N60DM6		2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STD12N60DM6			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STFI12N60M2 MOSFET N-CH 600V 9A I2PAKFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STFI12N60M2	Tube	1,487		1	1 $2.05 10 $2.05 100 $0.90 1000 $0.68 10000 $0.68	Buy Now

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12N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12n60c Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N60C O-263 O-220 728B1 transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C	PDF
Contextual Info: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	12N60C ISOPLUS247TM	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12N60 12N60 QW-R502-170	PDF
Contextual Info: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	12N60CD1	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12N60K-MT 12N60K-MT QW-R502-B06	PDF
12N60B Contextual Info: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	12N60B O-247 O-247 12N60B	PDF
12N60CD1 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600	Original	12N60CD1 12N60CD1 O-263 O-220	PDF
12N60C Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	12N60C O-247 O-247 12N60C	PDF
12n60b Abstract: 12n60bd1 12N60BD Contextual Info: IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms	Original	12N60BD1 O-220 12n60b 12n60bd1 12N60BD	PDF
Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N60C O-263 O-220 728B1	PDF
12n60a Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12N60 12N60 12N60L QW-R502-170 12n60a UTC12N60 12N-60a 12N60B 12N60L 12N60-A 12N60-B	PDF
12n60c Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB Contextual Info: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS 12N60C3DR, 12N60C3DR, 12N60C3DRS CT ODU ODUCT	Original	G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB	PDF
12N60CD1 Abstract: 12n60c Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	12N60CD1 728B1 12N60CD1 12n60c	PDF
12n60b Abstract: servo motors IXGH12N60B dc motor high torque 12N60 12N60-B Contextual Info: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N60B 12n60b servo motors IXGH12N60B dc motor high torque 12N60 12N60-B	PDF

IXGA 12N60C Contextual Info: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM	OCR Scan	12N60C 12N60C O-263 O-220 IXGA 12N60C	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	12N60BD1 O-247	PDF
Contextual Info: Low VCE sat IGBT with Diode IXSA 12N60AU1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12N60AU1	PDF
Contextual Info: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	12N60C ISOPLUS247TM 728B1	PDF
12N60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12N60 12N60 QW-R502-170 12N60l	PDF
12n60c Abstract: transistor 12n60c 98503B 12N60 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	12N60C O-247 728B1 12n60c transistor 12n60c 98503B 12N60	PDF
12n60b Abstract: 12N60-B 98909 Contextual Info: IXGA 12N60B IXGP 12N60B HiPerFASTTM IGBT VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	12N60B O-220 with020 728B1 12n60b 12N60-B 98909	PDF
12n60 dc Abstract: 12n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.	Original	12N60 12N60 12N60L 12N60G QW-R502-170 12n60 dc	PDF
IGBT g Abstract: TO263AA Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N60CD1 12N60CD1 O-220 O-263 IGBT g TO263AA	PDF
Contextual Info: n ix Y S L o w V ^ IG B T with Diode IXSA 12N60AU1 VCES IC25 VCE sat 600 V 24 A 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions TO-263AA Tj =25°Cto150°C 600 V VC0R Tj =25°C to150°C ;R GE=1 MQ 600 V VGES Continuous ±20	OCR Scan	12N60AU1 Cto150 to150 O-263AA	PDF

12N60 Search Results

12N60 Datasheets (16)

12N60 Price and Stock

Rochester Electronics LLC HGTP12N60A4D

Rochester Electronics LLC FQA12N60

STMicroelectronics STD12N60M2

STMicroelectronics STD12N60DM6

STMicroelectronics STFI12N60M2

12N60 Datasheets Context Search

12n60c

12N60B

12N60CD1

12N60C

12n60b

12n60a

12n60c

12N60CD1

12n60b

IXGA 12N60C

12N60l

12n60c

12n60b

12n60 dc

IGBT g