12N60-B Search Results

12N60-B Datasheets (2)

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Jiangsu JieJie Microelectronics Co Ltd

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
JMPF12N60BJ		Jiangsu JieJie Microelectronics Co Ltd	600V, 12A N-channel enhancement mode power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching, PWM applications, and power management.	Original	PDF
JMPC12N60BJ		Jiangsu JieJie Microelectronics Co Ltd	600V, 12A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching and power management applications.	Original	PDF

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onsemi HGTG12N60B3 - Rail/Tube (Alt: HGTG12N60B3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HGTG12N60B3	Tube			450	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor HGT1S12N60B3 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S12N60B3		917		1	1 - 10 - 100 $1.60 1000 $1.33 10000 $1.18	Buy Now
Harris Semiconductor HGT1S12N60B3D Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S12N60B3D		400		1	1 - 10 - 100 $1.60 1000 $1.33 10000 $1.18	Buy Now
Harris Semiconductor HGT1S12N60B3DS Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S12N60B3DS		1,100		1	1 - 10 - 100 $1.22 1000 $1.09 10000 $1.02	Buy Now