12n60c
Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
Contextual Info: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS G12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT
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g12n612n60s12n6hgtg12n60c3dr+10hgtp12n60c3drhgt1s12n60c3drsgtg12n12n60c12n60c3dg12n60c3ds12n-612n60c312n60 dcto-247ab
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g12n60c3d
Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
Contextual Info: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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hgtg12n60c3d150octa49123ta49061+4210nsg12n60c3dld26rhrp1560
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TG12N60C3D
Abstract: g12n60c3d TG12N60 g12n G12N60
Contextual Info: G12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .
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hgtg12n60c3d210nstg12n60c3dg12n60c3d+3tg12n60g12ng12n60
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G12N60b3
Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
Contextual Info: G12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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hgtg12n60b3hgtp12n60b3hgt1s12n60b3s150oc+8112nsg12n60b3g12n60ta49171hgt1s12n60b3s9ahgtp12n60b3dld26110a
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G12N60B3
Abstract: HGTG12N60B3 HGTG12N60B3D LD26
Contextual Info: G12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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hgtg12n60b3150oc112nsg12n60b3+2hgtg12n60b3dld26
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G12N60b3
Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
Contextual Info: in t e HGTP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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hgtp12n60b3hgt1s12n60b3sta49171rationg12n60b3+7g12n60bhgt1s12n60b3s9ahgtp12n60b3dld26tb334g12n60bipolar hj
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G12N60D1D
Abstract: G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D
Contextual Info: G12N60D1D S E M I C O N D U C T O R 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss
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hgtg12n60d1do-247500ns150oc+5g12n60d1dg12n60d1hgtg12n60d1an7254an7260
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g12n60d1
Abstract: AN7254 AN7260 HGTP12N60D1
Contextual Info: HGTP12N60D1 S E M I C O N D U C T O R 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss
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HGT1S12N60B3S
Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60
Contextual Info: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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Contextual Info: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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hgtg12n60c3d150octa49123ta49061+1210ns
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G12N60D1
Abstract: 12n60d1 28-303 A 933 S transistors
Contextual Info: HGTP12N60D1 cE W s 12A, 600V N-Channel IGBT April 1995 Features Package • 12A,600V JEDEC TO-220AB • Latch Free Operation EMfTTER CO LLECTO R • Typical Fall Time <500ns GATE • High Input Impedance CO LLECTO R FLA NG E • L o w C o n d u c tio n Loss
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hgtp12n60d1o-220ab500nsg12n60d1+312n60d128-303a 933 s transistors
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G12N60D1
Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60
Contextual Info: G12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE
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Contextual Info: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss
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Contextual Info: HGTP12N60B3, HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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DIODE 3LU
Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
Contextual Info: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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hgtp12n60b3hgt1s12n60b3hgt1s12n60b3s112ns+51-800-4-harrisdiode 3ludiode 3lu 32diode 3lu 353lu diode
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g12n60c3d
Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C
Contextual Info: G12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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hgtg12n60c3dta49123ta49061ta49117+5g12n60c3dtransistor no c110c110rhrp1560g12n60c
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G12N60
Abstract: 4410 mosfet G12N60b3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 TA49171
Contextual Info: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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hgtp12n60b3hgt1s12n60b3s150ocg12n60+64410 mosfetg12n60b3hgt1s12n60b3s9ahgtp12n60b3dtb334ta49171
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G12N60B3
Abstract: TO-262AA Package equivalent
Contextual Info: HARRIS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 2 5 °C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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hgtp12n60b3hgt1s12n60b3hgt1s12n60b3s1-800-4-harris+2g12n60b3to-262aa package equivalent
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G12N60B3
Abstract: HGT1S12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60
Contextual Info: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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G12N60C3D
Abstract: TA49123 G12N60 G12N60C G12N60C3 HGTG12N60C3D RHRP1560 TA49061
Contextual Info: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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717 MOSFET
Contextual Info: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the
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hgtp12n60b3hgt1s12n60b3hgt1s12n60b3s150oc+21-800-4-harris717 mosfet
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G12N60C3D
Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60
Contextual Info: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating
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g12n60d1
Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
Contextual Info: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device
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g12n60c3d
Abstract: hyperfast diode reference guide HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 g12n60c3
Contextual Info: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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