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Contextual Info: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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12n60cd1 |
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12N60CD1
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600
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12n60cd1o-263o-220 |
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12N60CD1
Abstract: 12n60c
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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12n60cd1728b112n60c |
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IGBT g
Abstract: TO263AA
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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12n60cd1o-220o-263igbt g+1to263aa
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12N60CD1
Abstract: IGBT g 12N60CD
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V
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12n60cd1o-263with055igbt g+112n60cd
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C25 diode
Abstract: GE 0270
Contextual Info: nixY S Advanced Technical Information HiPerFAST IGBT IXGA 12N60CD1 VCES IXGP 12N60CD1 C25 V 24 A 2.1 V 120 ns V CE sat tf'(typ) oe 600 Gil OE Maximum Ratings Symbol Test Conditions V CES Tj =25°C to 150°C 600 V V CGR Tj = 25° C to 150° C; RGE= 1 MU
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12n60cd1o-220o-263c25 diode+1ge 0270
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IXGH 12N60CD1
Abstract: IXGH12N60CD1 12N60CD1
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES IC25 = = = = VCE sat tfi(typ) 600 V 24 A 2.1 V 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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12n60cd1o-247ixgh 12n60cd1ixgh12n60cd1 |
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12N60CD1
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES IC25 = = = = VCE sat tfi(typ) 600 V 24 A 2.1 V 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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12n60cd1o-247 |
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12n60c
Abstract: IXGC 12N60C transistor 12n60c IXGA12N60C IXGC12N60CD1 12N60CD1
Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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12n60c12n60cd1isoplus247tm15fred+7ixgc12n60cd1728b1123b1065b1ixgc 12n60ctransistor 12n60cixga12n60c
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Contextual Info: □ IXYS Advanced Technical Information H iP e r F A S T IG B T L ig h t s p e e d ™ S e r ie s IXGH 12N60CD1 Symbol TestC onditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20
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12n60cd1o-247 |
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IXGC 12N60C
Abstract: 12N60C
Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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isoplus247tm12n60c12n60cd1isoplus220tm+5e153432728b1123b1065b1ixgc 12n60c
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12n60c
Abstract: 12N60
Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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isoplus247tm12n60c12n60cd1isoplus220tm+4728b1123b1065b112n60
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Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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12n60cd1o-263728b1 |
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Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A
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12n60cd1o-247 |
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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o-220o-263o-24728n30+1630n3040n302n1008n1006n10012n10q120n60b40n30bd132n507n60c20n60bu140n60ab-2160200n6012n60cixgh24n50b
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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plus24720n3028n3030n30+1540n3031n6038n6041n6060n60o-264200n60n60c50n607n60bic igbt 25n120ic60080n6060n60 igbt25n120
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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axc-051axc-053axc-101axc-102+16axl-001axl-051axv-102142-12io8142-16io819-08ho17n60b35n120u1ixys dsei 45-12adsdi 35-12a20n8080n0680n60vvy 40-16io1ixys cs 2-12ixfx 44n80
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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o-220o-263o-247plus247+15o-268isoplus247tmo-26420n3028n3030n3012n60c60n60 igbtdiode b24231n60ixgk50n60bu150n60bd1diode 12 b2120n6060n60
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2QN60
Abstract: ixgh 1500
Contextual Info: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH
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t0-220ab12n100u117n100u140n30bd1+622n50bu124n50bu132n50bu12qn60bu12qn60ixgh 1500
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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axc-051axc-051-raxc-102axv-002+16015-14to12x45-16io12x60-08io12x60-12io12x60-14io12x60-16io1dse 130 -06avub 70-12ixgh 30n120vub 70-1630n60b80n1012n60cddsei 30-16 asdsep 15-06a13n50
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