931 diode smd
Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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24n60au124n60au1so-247ixgh24n60au1+4ixgh24n60au1s4bflb22t931 diode smdg20n60
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G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Contextual Info: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24n60au124n60au1so-247ixgh24n60au1s+4ixgh24n60au1g20n60g24n60ixys ixgh24n60au1 to-247
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G24N60D1
Abstract: G24N60 AN7254 AN7260 HGTG24N60D1
Contextual Info: G24N60D1 24A, 600V N-Channel IGBT May 1995 Features Package • 24A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss Description
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hgtg24n60d1o-247500ns150oc+4g24n60d1g24n60an7254an7260
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g24n60d1d
Abstract: g24n60d G24N60 HGTG24N60D1D AN7254 AN7260 g24n60d1
Contextual Info: G24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss
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hgtg24n60d1do-247500ns150oc+6g24n60d1dg24n60dg24n60an7254an7260g24n60d1
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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plus24720n3028n3030n30+1540n3031n6038n6041n6060n60o-264200n60n60c50n607n60bic igbt 25n120ic60080n6060n60 igbt25n120
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g24n60d1d
Abstract: HGTG24N60D1D g24n60d1 AN7254 AN7260 g24n60d BVces
Contextual Info: S E M I C O N D U C T O R G24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE
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hgtg24n60d1do-247500ns150oc+6g24n60d1dg24n60d1an7254an7260g24n60dbvces
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g24n60d1
Abstract: 24N60D1 24N60D
Contextual Info: ^ ^ 3 G24N60D1 S E M I C O N D U C T O R 24A, 600V N-Channel IGBT May 1995 Features Package • 24A ,600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss Description Terminal Diagram
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g24n60d1
Abstract: 240v DC motor AN7254 AN7260 HGTG24N60D1 G24N60
Contextual Info: G24N60D1 S E M I C O N D U C T O R 24A, 600V N-Channel IGBT May 1995 Features Package • 24A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss
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hgtg24n60d1o-247500ns150oc+5g24n60d1240v dc motoran7254an7260g24n60
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