BVCES Search Results

IGBT THEORY AND APPLICATIONS 400V

Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Contextual Info: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page

K1 transistor

Contextual Info: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.

NT 407 F TRANSISTOR

Abstract: NT 407 F power transistor motorola bipolar transistor MJE8503A Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf
Contextual Info: MOTOROLA Order this document by MJE8503A/D SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching

Contextual Info: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)

transistor R2U

Abstract: SSTA63 marking B25 transistor b25
Contextual Info: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)

Contextual Info: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 Features 1 BVCES < 80V Ic=100µA) External dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A W

INDUCTION HEATING

Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
Contextual Info: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

FGPF4633

Abstract: FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60
Contextual Info: FAIRCHILD IGBTs, JFETs and Power MOSFETs Products may be RoHS compliant. Check mouser.com for RoHS status. *Kinked Leads ♦ Surface Mount Device MOUSER STOCK NO. Mfr. For quantities greater than listed, call for quote. Package Mfr. Part No. BVCES IC Min V (A)

transistor R2U

Abstract: transistor b25 B25-12 transistor
Contextual Info: PNP Darlington transistor Die no. B-25 Dimensions Units : mm These are epitaxial planar PNP silicon Darlington transistors. SST3 Features • • 1.9±0.Z available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCes = 30 V (min)

transistor 13003L

Abstract: APT13003LZ
Contextual Info: A Product Line of Diodes Incorporated Green APT13003L 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2

GU13005S

Contextual Info: A Product Line of Diodes Incorporated Green APT13005S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 3.2A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2

Contextual Info: A Product Line of Diodes Incorporated Green APT27 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS compliant Notes 1 & 2

BC548 BH

Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) TYPE NO. BVCBO BVCEO BVEBO *BVCES ICBO @ *I CEV @ VCB (V) (V) (V) (V) (nA) MIN MIN MIN MAX hFE @ VCE @ IC (V) (mA) VCE (SAT) @ IC toff Cob fT (pF) (MHz)

MMSTA28

Abstract: SSTA28 T116 T146
Contextual Info: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 zFeatures 1 BVCES < 80V Ic=100µA) zExternal dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A

Contextual Info: IGBT IGBT + SOFT RECOVERY/ULTRA FAST A.P. RECTIFIER PACKAGE TO-254 TO-258 DEVICE TYPE BVCES VOLTS SNGD20620 600 SNGD20620A tf * l rr * 1 Reverse Diode nsec VCE (sat) VOLTS nsec 20 2.6 570 130 75 600 20 3.1 310 130 75 SNGD20640 600 40 2.0 800 150 125 SNGD20648A

NPN EBC SOT-23

Abstract: SOT-23 EBC NPN transistor ECB TO-92
Contextual Info: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003

BUS47

Abstract: BUS47A
Contextual Info: MOTOROLA SC -CXSTRS/R 6 3 6 7 2 54 F3- "Tt MOTOROLA SC XSTRS/R D-E~Jt.3t.7a5M 98D 8 0 7 2 1 F - MOTOROLA NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS (BVCEOI 150 WATTS 850 - 1000 V (BVCES) The BUS 4 7 and BUS 4 7 A transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall

bus98a

Abstract: BUS98 1N4937 BUV20 MJE200 MJE210 buv20 equivalent
Contextual Info: MOTOROLA Order this document by BUS98/D SEMICONDUCTOR TECHNICAL DATA Designer's BUS98 BUS98A  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES)

STGB3NB60SDT4

Contextual Info: £jj Low drop, standard speed IGBTs - frequency up to 1kHz Part number BVces M STGB3NB60SDT4 STGD3NB60SDT4 STGD3NB60SD-1 STGF7NB60SL STGP10NB60SFP STGF10NB60SD STGD7NB60ST4 STGB10NB60ST4 STGP10NB60S STGP10NB60SD STGF20NB60S STGW35NB60SD STGE200NB60S 600 600

SGL40N150

Abstract: SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600
Contextual Info: IGBT Selection Guide SAMSUNG IGBT • High Performance Low Vce(sat ,High Speed) - Power Conversion Application PKG DEVICE Bvces [V] Ic [A] Vce(s)[V] (Min.) (Tc=100°C) (Typ.) Tf [ns] (Typ.) D-PAK SGR6N60UF 600 3 2.1 80 D2- PAK SGW6N60UF 600 3 2.1 80 SGW13N60UF

JE8503

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 6.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching

Transistor 3-354

Abstract: TRANSISTOR 3356 BUS98 BUS96 ad 142 transistor bus98a C 3355 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850-1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high-voltage, high-speed,

BD139 fall time

Abstract: TRANSISTOR REPLACEMENT GUIDE transistor cross reference BUS98 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,