SNG20640 Search Results

Contextual Info: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)

IXGD30N60

Abstract: IXGD10N60
Contextual Info: PACKAGE TO-257 TO-254 TO-258 'c »I VOLTS AMPS VCE <sat VOLTS n sec PO WATTS CHIP 10 2.5 300 50 IXGD10N60 SNG30610A 600 600 10 3.0 300 50 IXGD10N60A SMG301010 1000 10 3.5 800 50 1XGD10N100 SNG301010A 1000 10 4.0 500 50 IXGD10N100A DEVICE TYPE b v ces •c

SNG41270A

Contextual Info: A POW ERHOUSE IGBT IG B T : INS. G A T E B I P O L A R T R A N S I S T O R > o TO-254 CO 1-J TO-257 DEVICE TYPE C O LU O > m PACKAGE *C cont AMPS VCE (sat) VOLTS * f (1 ) Ci c- nsec’ Pf ~ c w SNG30620 600 20 2.6 570 75C 2.0 SNG30620A 600 20 3.1 310 750