IXGD40N60A
Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Contextual Info: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60
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IXGD28N30
IXGD40N30
IXGD10N60
IXGD20N60
IXGD31N60
IXGD30N60
IXGD38N60
IXGD40N60
IXGD60N60
IXGD200N60
IXGD40N60A
1XGH10N60
xgh10n60a
IXGH40N60
IXGH50N60A
1X57
IXGH60N60
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IXGD32N60B-5X
Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43
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IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-3X
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7Y
IXGD200N60B-9X
IXGD2N100-1M
IXGD4N100-1T
IXGD8N100-2L
IXGD32N60B-5X
ixgh45n120
IXGH24N60B
IXGH50N60B
IXGH32N60B
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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IXGD30N60
Abstract: IXGD10N60
Contextual Info: PACKAGE TO-257 TO-254 TO-258 'c »I VOLTS AMPS VCE <sat VOLTS n sec PO WATTS CHIP 10 2.5 300 50 IXGD10N60 SNG30610A 600 600 10 3.0 300 50 IXGD10N60A SMG301010 1000 10 3.5 800 50 1XGD10N100 SNG301010A 1000 10 4.0 500 50 IXGD10N100A DEVICE TYPE b v ces •c
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O-257
SNG3Q610
SNG30610A
SMG301010
SNG301010A
IXGD10N60
IXGD10N60A
1XGD10N100
IXGD10N100A
O-254
IXGD30N60
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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IXGH24N50B
Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Contextual Info: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500
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IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-33
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7X
IXGD200N60-9X
IXGD8N100-2L
IXGD12N100-33
IXGD17N100-4T
IXGH24N50B
IXGH50N60B
IXGH32N60B
IXGH50N60A
ixgh24n60a equivalent
IXGH24N60A
IXGH17N100
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