50N60A Search Results

IXGK50N60A2D1

Contextual Info: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

50N60A

Abstract: IXGH50N60AS IXGH50N60A
Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600

IXGH50N60A

Abstract: 100-200Q IXGH50N60AS
Contextual Info: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous

50n60

Abstract: ixsk50n60au1 50N60AU1
Contextual Info: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings

Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20

50N60A

Abstract: IXGH50N60A
Contextual Info: HiPerFASTTM IGBT IXGH 50N60A VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

Contextual Info: Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab IXGR 50N60A2U1 VCES IC25 VCE sat = 600 V = 75 A = 1.7 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES

Contextual Info: D IX Y S IXSX 50N60AU1 IGBT with Diode VCES = 600 V •ca PLUS 247 package = 75A W 2JV Short Circuit S O A Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T j =25°Cto 150°C 600 V vCQR Tj = 25°Cto 150°C; RG6 = 1 Mi2 600 V VGES

50N6

Abstract: 50N60A IXGH50N60A
Contextual Info: o ix y s HiPerFAST IGBT IXGH 50N60A VCES IC25 V— tfi Surface Mountable = 600 V = 75 A = 2.7 V = 275 ns ÔE Maximum Ratings Symbol Test Conditions V CEs T j = 2 5 °C to 1 5 0 °C 600 V Vce„ T ,J = 2 5 ° C to 15 0 °C; R jfc „ = 1 MQ 600 V v GES Continuous

60N60A

Abstract: c5021-0
Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90

mj 340

Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Contextual Info: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM

50N60A

Abstract: IF110 PLUS247 IXGX50N60A2U1
Contextual Info: Advance Technical Information IGBT with Diode IXGK 50N60A2U1 VCES IXGX 50N60A2U1 IC25 VCE sat Low Saturation Voltage IGBT with Low Forward Drop Diode = 600 V = 75 A = 1.6 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C

C8750

Contextual Info: m xY S IGBT with Diode IXSK 50N60AU1 VCES I C25 v* CE sat Short Circuit S O A Capability 600 V 75 A 2.7 V ?c G OE Maximum Ratings Symbol Test Conditions VCES T0 = 25° C to 150° C 600 V VCGR Tj = 25° C to 150°C; RGE= 1 Mi2 600 V VGES VGEM Continuous ±20

Contextual Info: XYS IGBT with Diode vC E S IXSK 50N60AU1 ^C 25 v C E sat = 600V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RQE = 1 600 V v GES Continuous ±20 V v GEM

Contextual Info: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads

931 diode smd

Abstract: 50n60 IXGX50N60AU1 50N60AU1 IXGX50N60AU1S ic 931
Contextual Info: Preliminary data HiPerFASTTM IGBT with Diode 50N60AU1 50N60AU1S Combi Pack VCES IC25 VCE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20

50n60

Abstract: 50N60AU1
Contextual Info: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Advanced Technical Information Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600

50N60

Abstract: 50N6
Contextual Info: IGBT with Diode vCES 50N60AU1 50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2

ic tea 1090

Abstract: smd tea 521 27AD
Contextual Info: Preliminary data HiPerFAST IGBT with Diode 50N60AU1 50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO

IF110

Abstract: ISOPLUS247 IXGR50N60A2U1 IGBT g
Contextual Info: Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab IXGR 50N60A2U1 VCES IC25 VCE sat = 600 V = 75 A = 1.7 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings