D94006DE Search Results

50N60A

Abstract: IXGH50N60AS IXGH50N60A
Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600

10N60A

Abstract: IGBT 10N60 10N6Q
Contextual Info: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s

smd diode JC 0p

Abstract: DIODE SMD GEM IXGH24N60AU1S
Contextual Info: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600

IFR 640

Abstract: S41c 24N60A IXGA24N60A
Contextual Info: n i x Y S HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = w CES ^C25 v v CE sat tfi 600 V 48 A 2.7 V 275 ns Prelim inary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous

IXGA24N60A

Contextual Info: DIXYS IXGA 24N60A IXGH 24N60A HiPerFAST IGBT = = = = CES C25 v ¥ CE sat tfi 600 V 48 A 2.7 V 275 ns Preliminary data Maximum Ratings Symbol Test Conditions v’ c e s ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 M£2 600 V v* GES Continuous

ixgh10n60

Abstract: 10N60AU L1229 10n60au1
Contextual Info: ^C25 V v CE sat 20 A 20 A 2.5 V 3.0 V V CES Low V_c. IGBT with Diode CE(sat) High speed IGBT with Diode 600 V IX G A /IX G H 10N60U1 IX G A /IX G H 10N60AU1 600 V Combi Packs P relim in ary data Maximum Ratings Symbol Test Conditions vt c e s Tj = 25°C to 150°C

Contextual Info: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous

Contextual Info: nixYS HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = CES ^C25 vv CE sat t 600 V 48 A 2.7 V 275 ns P relim inary data Symbol Test Conditions vCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 600 V vt g e s vGEM Continuous ±20 V Transient

10n60au1

Abstract: igbt to247 10N60U1
Contextual Info: DIXYS V V CES Low VCE sat IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10N60AU1 600 V ^C25 VCE(sat) 20 A 20 A 2.5 V 3.0 V Combi Packs Preliminary data Sym bol Test C onditions v CES Td = 25°C to 150°C 600 V VCGH T,J = 25°C to 150°C;’ RCat

n60b

Abstract: n60bu 32N60A
Contextual Info: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C