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    N60B Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMPC4N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management in a TO-220C-3L package. Original PDF
    badge JMPF12N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 12A N-channel enhancement mode power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching, PWM applications, and power management. Original PDF
    badge JMPF10N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.90 ohm at VGS = 10V, designed for fast switching and power management applications. Original PDF
    badge JMPF20N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package. Original PDF
    badge JMPC12N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 12A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching and power management applications. Original PDF
    badge JMPF4N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management in a TO-220FP-3L package. Original PDF
    badge JMPC16N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 16A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.52 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    badge JMPC8N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 8A, 600V N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 1.29 ohm at VGS = 10V, designed for fast switching and power management applications. Original PDF
    badge JMPF8N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 8A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.74 ohm at VGS=10V, designed for fast switching, PWM applications, and power management. Original PDF
    badge JMPC20N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220C-3L package. Original PDF
    badge JMPF16N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 16A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.52 ohm at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested. Original PDF
    badge JMPC10N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 10A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.9 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    badge 10N60B
    		AK Semiconductor 10A, 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.6 ohms at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability. Original PDF
    badge JMPK4N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 4A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management. Original PDF
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    N60B Price and Stock

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    onsemi HGTG20N60B3

    600V, PT IGBT - Rail/Tube (Alt: HGTG20N60B3)
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    Avnet Americas HGTG20N60B3 Tube 450
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    Rochester Electronics HGTG20N60B3 11,700 1
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    Avnet Silica HGTG20N60B3 53 Weeks 240
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    Flip Electronics HGTG20N60B3 2,700
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    Microchip Technology Inc APT30GN60BDQ2G

    - Rail/Tube (Alt: APT30GN60BDQ2G)
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    Avnet Americas APT30GN60BDQ2G Tube 26 Weeks 120
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    Microchip Technology Inc APT30GN60BDQ2G Tube 38 26 Weeks
    • 1 $4.97
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    Avnet Silica APT30GN60BDQ2G 28 Weeks 1
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    EBV Elektronik APT30GN60BDQ2G 27 Weeks 1
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    Master Electronics APT30GN60BDQ2G
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    Vyrian APT30GN60BDQ2G 3,553
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    Microchip Technology Inc APT150GN60B2G

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    Avnet Americas APT150GN60B2G Tube 26 Weeks 30
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    Microchip Technology Inc APT150GN60B2G Tube 26 Weeks
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    Master Electronics APT150GN60B2G
    • 1 $19.18
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    • 100 $16.10
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    Microchip Technology Inc APT40N60BC7

    MOSFET FAST SUPERJUNCTION 600 V 40 A TO-247 - Rail/Tube (Alt: APT40N60BC7)
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    Avnet Americas APT40N60BC7 Tube 60
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    Microchip Technology Inc APT40N60BC7 Tube 28 28 Weeks
    • 1 $10.96
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    Master Electronics APT40N60BC7
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    Microchip Technology Inc APT75GN60BG

    - Rail/Tube (Alt: APT75GN60BG)
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    Avnet Americas APT75GN60BG Tube 26 Weeks 80
    • 1 -
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    • 100 $6.94
    • 1000 $6.23
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    Mouser Electronics APT75GN60BG 218
    • 1 $6.96
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    • 100 $5.90
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    Microchip Technology Inc APT75GN60BG Tube 201 26 Weeks
    • 1 $7.04
    • 10 $7.04
    • 100 $6.10
    • 1000 $5.58
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    Avnet Silica APT75GN60BG 28 Weeks 1
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    EBV Elektronik APT75GN60BG 27 Weeks 1
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    Master Electronics APT75GN60BG
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    • 100 $6.01
    • 1000 $5.61
    • 10000 $5.51
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    Vyrian APT75GN60BG 4,786
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    N60B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32N60B

    Abstract: 32N60A N60B DIXYS IXGH32N60B
    Contextual Info: DIXYS HiPerFAST IG BT IXGH 32 N60A IXGH32 N60B VCES ^C25 VCE sat tfi 600 V 600 V 60 A 60 A 2.9 V 2.5 V 125 ns 80 ns Prelim inary data ÔE Sym bol Test C onditions Maximum Ratings V t ces Tj = 25°C to 150°C 600 V vt c g r Tj = 25°C to 150°C; RGE = 1 MQ


    OCR Scan     		IXGH32 O-247 32N60A 32N60B 32N60B N60B DIXYS IXGH32N60B PDF

    n60b

    Abstract: n60bu 32N60A
    Contextual Info: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C


    OCR Scan     		IXGH32 N60AU1 N60AU1S N60BU1S O-247 32N60 32N60AU1) n60b n60bu 32N60A PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF