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    N60B Search Results

    N60B Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMPF10N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.90 ohm at VGS = 10V, designed for fast switching and power management applications. Original PDF
    badge JMPF12N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 12A N-channel enhancement mode power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching, PWM applications, and power management. Original PDF
    badge JMPC4N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management in a TO-220C-3L package. Original PDF
    badge JMPF4N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 4A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management in a TO-220FP-3L package. Original PDF
    badge JMPC12N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 12A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.72 ohm at VGS = 10V, designed for fast switching and power management applications. Original PDF
    badge JMPF20N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package. Original PDF
    badge JMPC16N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 16A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.52 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    badge JMPC8N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 8A, 600V N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 1.29 ohm at VGS = 10V, designed for fast switching and power management applications. Original PDF
    badge JMPF16N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 16A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.52 ohm at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested. Original PDF
    badge JMPC20N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220C-3L package. Original PDF
    badge JMPF8N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 8A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.74 ohm at VGS=10V, designed for fast switching, PWM applications, and power management. Original PDF
    badge 10N60B
    		AK Semiconductor 10A, 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.6 ohms at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability. Original PDF
    badge JMPC10N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 10A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.9 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    badge JMPK4N60BJ
    		Jiangsu JieJie Microelectronics Co Ltd 600V, 4A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(ON) less than 2.52 ohms at VGS = 10V, designed for load switching, PWM applications, and power management. Original PDF
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    N60B Price and Stock

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    Rochester Electronics LLC SSR2N60BTF

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSR2N60BTF Bulk 165,500 1,093
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    • 10000 $0.27
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    Rochester Electronics LLC SSI4N60BTU

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSI4N60BTU Bulk 50,126 433
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    • 1000 $0.69
    • 10000 $0.69
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    Rochester Electronics LLC HGTG20N60B3-FS

    IGBT 600V 40A TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N60B3-FS Bulk 42,154 74
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    • 100 $4.06
    • 1000 $4.06
    • 10000 $4.06
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    Rochester Electronics LLC SSS1N60B

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSS1N60B Bulk 3,684 1,397
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    • 10000 $0.21
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    Micro Commercial Components MSJPFR20N60-BP

    N-CHANNEL MOSFET,TO-220AB(H)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSJPFR20N60-BP Tube 2,000 1
    • 1 $3.32
    • 10 $2.16
    • 100 $1.50
    • 1000 $1.13
    • 10000 $1.05
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    Mouser Electronics MSJPFR20N60-BP 1,941
    • 1 $3.32
    • 10 $2.16
    • 100 $1.51
    • 1000 $1.20
    • 10000 $1.20
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    Find more N60B price and stock on Findchips.com

    N60B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32N60B

    Abstract: 32N60A N60B DIXYS IXGH32N60B
    Contextual Info: DIXYS HiPerFAST IG BT IXGH 32 N60A IXGH32 N60B VCES ^C25 VCE sat tfi 600 V 600 V 60 A 60 A 2.9 V 2.5 V 125 ns 80 ns Prelim inary data ÔE Sym bol Test C onditions Maximum Ratings V t ces Tj = 25°C to 150°C 600 V vt c g r Tj = 25°C to 150°C; RGE = 1 MQ


    OCR Scan     		IXGH32 O-247 32N60A 32N60B 32N60B N60B DIXYS IXGH32N60B PDF

    n60b

    Abstract: n60bu 32N60A
    Contextual Info: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C


    OCR Scan     		IXGH32 N60AU1 N60AU1S N60BU1S O-247 32N60 32N60AU1) n60b n60bu 32N60A PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF