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    IXGH32 Search Results

    IXGH32 Datasheets (24)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGH32N100A3
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1000V 75A 300W TO247AD Original PDF 2
    IXGH32N120A3
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 75A 300W TO247 Original PDF 6
    IXGH32N170
    IXYS Low Saturation Voltage Types Original PDF 586.43KB 5
    IXGH 32N170
    IXYS High Voltage IGBT Original PDF 99.27KB 2
    IXGH32N170A
    IXYS High Voltage IGBT Original PDF 91.72KB 2
    IXGH32N170A
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 32A 350W TO247 Original PDF 5
    IXGH 32N170A
    IXYS TRANS IGBT CHIP N-CH 1700 at TJ=25C TO 150CV 32A TO-247 AD Original PDF 582.27KB 5
    IXGH32N50B
    IXYS Hiperfast IGBT Original PDF 51.57KB 2
    IXGH32N50BS
    IXYS HiPerFAST IGBT Original PDF 51.57KB 2
    IXGH32N50BU1
    IXYS Hiperfast IGBT With Diode Combi Pack Original PDF 52.81KB 2
    IXGH32N50BU1S
    IXYS HiPerFAST IGBT with Diode Combi Pack Original PDF 52.81KB 2
    IXGH32N60A
    IXYS 600V HiPerFAST IGBT Original PDF 55.34KB 2
    IXGH32N60AA
    IXYS 600V HiPerFAST IGBT Original PDF 55.34KB 2
    IXGH32N60AS
    IXYS 600V HiPerFAST IGBT Original PDF 55.34KB 2
    IXGH32N60AU1
    IXYS Hiperfast IGBT With Diode Combi Pack Original PDF 45.88KB 2
    IXGH32N60AU1S
    IXYS HiPerFAST IGBT with Diode Combi Pack Original PDF 45.88KB 2
    IXGH32N60B
    IXYS IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns Original PDF 35.13KB 2
    IXGH32N60BD1
    IXYS 600V HiPerFAST IGBT with diode Original PDF 69.63KB 2
    IXGH32N60BD1
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 200W TO247AD Original PDF 5
    IXGH32N60BU1
    IXYS IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns Original PDF 139.7KB 6
    SF Impression Pixel

    IXGH32 Price and Stock

    IXYS Corporation

    IXYS Corporation IXGH32N170A

    IGBT NPT 1700V 32A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N170A Tube 975 1
    • 1 $26.88
    • 10 $26.88
    • 100 $17.33
    • 1000 $16.45
    • 10000 $16.45
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    Mouser Electronics IXGH32N170A 274
    • 1 $26.88
    • 10 $17.20
    • 100 $17.20
    • 1000 $16.44
    • 10000 $16.44
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    TTI IXGH32N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $21.93
    • 10000 $21.93
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    TME IXGH32N170A 1
    • 1 $29.58
    • 10 $23.52
    • 100 $21.19
    • 1000 $21.19
    • 10000 $21.19
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    Chip Stock IXGH32N170A 164
    • 1 -
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    Vyrian IXGH32N170A 226
    • 1 -
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    IXYS Corporation IXGH32N120A3

    IGBT PT 1200V 75A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N120A3 Tube 351 1
    • 1 $11.71
    • 10 $11.71
    • 100 $7.02
    • 1000 $5.66
    • 10000 $5.66
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    Mouser Electronics IXGH32N120A3 297
    • 1 $11.46
    • 10 $6.62
    • 100 $6.62
    • 1000 $5.65
    • 10000 $5.65
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    Bristol Electronics IXGH32N120A3 25
    • 1 -
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    TTI IXGH32N120A3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.54
    • 10000 $7.54
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    TME IXGH32N120A3 1
    • 1 $12.01
    • 10 $8.90
    • 100 $7.49
    • 1000 $6.48
    • 10000 $6.48
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    IXYS Corporation IXGH32N170

    IGBT NPT 1700V 75A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N170 Tube 339 1
    • 1 $23.13
    • 10 $23.13
    • 100 $14.72
    • 1000 $13.60
    • 10000 $13.60
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    Mouser Electronics IXGH32N170 420
    • 1 $22.25
    • 10 $14.72
    • 100 $14.72
    • 1000 $13.59
    • 10000 $13.59
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    Verical () IXGH32N170 30 30
    • 1 -
    • 10 -
    • 100 $22.67
    • 1000 $22.67
    • 10000 $22.67
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    IXGH32N170 7 3
    • 1 -
    • 10 $24.26
    • 100 $24.26
    • 1000 $24.26
    • 10000 $24.26
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    Quest Components IXGH32N170 72
    • 1 $21.60
    • 10 $21.60
    • 100 $16.80
    • 1000 $16.80
    • 10000 $16.80
    Buy Now
    TTI IXGH32N170 Tube 30
    • 1 -
    • 10 -
    • 100 $18.13
    • 1000 $18.13
    • 10000 $18.13
    Buy Now
    TME IXGH32N170 7 1
    • 1 $21.53
    • 10 $19.17
    • 100 $19.17
    • 1000 $19.17
    • 10000 $19.17
    Buy Now
    IBS Electronics IXGH32N170 108 1
    • 1 $19.04
    • 10 $18.83
    • 100 $18.44
    • 1000 $18.13
    • 10000 $18.13
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    New Advantage Corporation IXGH32N170 60 1
    • 1 -
    • 10 -
    • 100 $20.92
    • 1000 $20.92
    • 10000 $20.92
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    Vyrian IXGH32N170 31
    • 1 -
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    IXYS Corporation IXGH32N60B

    IGBT 600V 60A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N60B Bulk
    • 1 -
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    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXGH32N60C

    IGBT 600V 60A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N60C Bulk
    • 1 -
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    Bristol Electronics IXGH32N60C 60
    • 1 -
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    Quest Components IXGH32N60C 48
    • 1 $25.50
    • 10 $25.50
    • 100 $21.68
    • 1000 $21.68
    • 10000 $21.68
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    IXGH32 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC 247 B

    Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
    Contextual Info: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25


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    IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) BC 247 B IXGH32N60 DIODE SMD GEM PDF

    IXGH32N60C

    Abstract: 610MJ
    Contextual Info: Advanced Data _ HiPerFAST IGBT Lightspeed™ Series vCES IXGH32N60C IXGH32N60CS 600 V 60 A 2.1 V 55 ns ^C25 vCE sat typ * fi typ 4 Symbol Test Conditions V • ces TJ vcaR C Maximum Ratings 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£3


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    IXGH32N60C IXGH32N60CS O-247 32N60CS) O-247AD O-247 610MJ PDF

    Contextual Info: □ IXYS P re lim in a ry D ata S heet IXGH32N50B IXGH32N50BS HiPerFAST IGBT V CES ^C25 V CE sat t 'fi 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) m Symbol Test Conditions V CES Ta = 2 5 C to 150 C 500 V V ¥cgr T j = 2 5 C to 150 C; RGE= 1 M 500 V V v GES


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    IXGH32N50B IXGH32N50BS O-247 32N50BS) PDF

    diode lt 247

    Abstract: IXGH32N60
    Contextual Info: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C


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    IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) diode lt 247 IXGH32N60 PDF

    Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 32A VCE sat ≤ 2.35V IXGH32N120A3 IXGT32N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    IC110 IXGH32N120A3 IXGT32N120A3 O-268 O-247 32N120A3 3-04-11-A PDF

    smd diode 819

    Abstract: rg33c
    Contextual Info: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES


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    IXGH32N60BU1 IXGH32N60BU1S T0-247 O-247 smd diode 819 rg33c PDF

    IXGH32N60C

    Contextual Info: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


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    IXGH32N60C IXGH32N60CS O-247 PDF

    IXGH32N60BU1

    Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V = = = = 600 V 60 A 2.5V 80 ns TO-247 AD VGES Continuous ±20 V VGEM Transient


    Original
    IXGH32N60BU1 O-247 IXGH32N60BU1 PDF

    Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM


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    IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) PDF

    1xgh32

    Abstract: IXGH32N60B
    Contextual Info: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C


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    IXGH32N60B IXGH32N60BS T0-247 32N60BS) 1xgh32 PDF

    32N60B

    Abstract: 32N60A N60B DIXYS IXGH32N60B
    Contextual Info: DIXYS HiPerFAST IG BT IXGH 32 N60A IXGH32 N60B VCES ^C25 VCE sat tfi 600 V 600 V 60 A 60 A 2.9 V 2.5 V 125 ns 80 ns Prelim inary data ÔE Sym bol Test C onditions Maximum Ratings V t ces Tj = 25°C to 150°C 600 V vt c g r Tj = 25°C to 150°C; RGE = 1 MQ


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    IXGH32 O-247 32N60A 32N60B 32N60B N60B DIXYS IXGH32N60B PDF

    IXGH32N60B

    Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM


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    IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B PDF

    32N60B

    Abstract: 32N60BU1 IXGH32N60B
    Contextual Info: □IX Y S j Prelim inary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 V CE sat tfi < Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v* GES v GEM Continuous ±20 V T ransient ±30 V Maximum Ratings


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    IXGH32N60B IXGH32N60BS 13/IONm/lb O-247 4bflb22b 32N60B 32N60BU1 PDF

    smd diode UJ 64 A

    Abstract: cz 017 v3
    Contextual Info: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90


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    IXGH32N60BU1 IXGH32N60BU1S O-247 4bflb22b smd diode UJ 64 A cz 017 v3 PDF

    MJI-25

    Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2


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    IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) MJI-25 PDF

    TT 2146

    Abstract: 3em smd 1520S smd 3EM
    Contextual Info: Preliminary Data Sheet IXGH32N50B IXGH32N50BS Hi Per FAST IGBT V C ES IC25 V CE sat 500 V 60 A 2.0 V 80 ns T 0 -2 4 7 SMD (32N 50B S ) Symbol TestC onditions v CES Td = 2 5 °C to 1 5 0 °C 500 V V CGR Td = 25°C to 150°C; RGE = 1 M il 500 V V GES Continuous


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    IXGH32N50B IXGH32N50BS TT 2146 3em smd 1520S smd 3EM PDF

    Contextual Info: Advance Technical Information GenX3TM 1000V IGBT IXGH32N100A3 IXGT32N100A3 VCES = 1000V IC25 = 75A VCE sat ≤ 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions VCES TC = 25°C to 150°C VCGR Maximum Ratings 1000


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    IXGH32N100A3 IXGT32N100A3 O-247 O-268 IC110 338B2 PDF

    IXGH32N50BU1

    Abstract: IXGH32N50BU1S
    Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) IXGH32N50BU1 IXGH32N50BU1S PDF

    IXGH32N60B

    Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD
    Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM


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    IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B 95566B IXGH32N60 TO-247 AD PDF

    IXGH32N50B

    Abstract: IXGH32N50BS
    Contextual Info: Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V


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    IXGH32N50B IXGH32N50BS O-247 32N50BS) IXGH32N50B PDF

    Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Maximum Ratings = = = = 600 V 60 A 2.5V 80 ns TO-247 AD Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


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    IXGH32N60BU1 O-247 PDF

    ixgh32n60

    Abstract: MJ170
    Contextual Info: HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS v CES ^C25 VCE sat typ ^fity p 600 V 60 A 2.1 V 55 ns Preliminary Data Sheet Symbol Test Conditions ^C E S Tj = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE = 1 MQ 600 V v CGR Maximum Ratings


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    IXGH32N60C IXGH32N60CS O-247 32N60CS) ixgh32n60 MJ170 PDF

    IXGT32N100A3

    Abstract: IXGH32N100 GenX3TM IXGH32N100A3
    Contextual Info: Advance Technical Information GenX3TM 1000V IGBT IXGH32N100A3 IXGT32N100A3 VCES = 1000V = 75A IC25 VCE sat ≤ 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions VCES TC = 25°C to 150°C VCGR Maximum Ratings 1000


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    IXGH32N100A3 IXGT32N100A3 O-247 O-268 IC110 338B2 IXGT32N100A3 IXGH32N100 GenX3TM IXGH32N100A3 PDF

    n60b

    Abstract: n60bu 32N60A
    Contextual Info: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C


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    IXGH32 N60AU1 N60AU1S N60BU1S O-247 32N60 32N60AU1) n60b n60bu 32N60A PDF