IXGH32 Search Results

IXGH32 Datasheets (24)

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IXYS

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGH32N100A3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1000V 75A 300W TO247AD	Original	PDF		2
IXGH32N120A3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 75A 300W TO247	Original	PDF		6
IXGH32N170	IXYS	Low Saturation Voltage Types	Original	PDF	586.43KB	5
IXGH 32N170	IXYS	High Voltage IGBT	Original	PDF	99.27KB	2
IXGH32N170A	IXYS	High Voltage IGBT	Original	PDF	91.72KB	2
IXGH32N170A	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 32A 350W TO247	Original	PDF		5
IXGH 32N170A	IXYS	TRANS IGBT CHIP N-CH 1700 at TJ=25C TO 150CV 32A TO-247 AD	Original	PDF	582.27KB	5
IXGH32N50B	IXYS	Hiperfast IGBT	Original	PDF	51.57KB	2
IXGH32N50BS	IXYS	HiPerFAST IGBT	Original	PDF	51.57KB	2
IXGH32N50BU1	IXYS	Hiperfast IGBT With Diode Combi Pack	Original	PDF	52.81KB	2
IXGH32N50BU1S	IXYS	HiPerFAST IGBT with Diode Combi Pack	Original	PDF	52.81KB	2
IXGH32N60A	IXYS	600V HiPerFAST IGBT	Original	PDF	55.34KB	2
IXGH32N60AA	IXYS	600V HiPerFAST IGBT	Original	PDF	55.34KB	2
IXGH32N60AS	IXYS	600V HiPerFAST IGBT	Original	PDF	55.34KB	2

IXGH32N60AU1	IXYS	Hiperfast IGBT With Diode Combi Pack	Original	PDF	45.88KB	2
IXGH32N60AU1S	IXYS	HiPerFAST IGBT with Diode Combi Pack	Original	PDF	45.88KB	2
IXGH32N60B	IXYS	IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns	Original	PDF	35.13KB	2
IXGH32N60BD1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF	69.63KB	2
IXGH32N60BD1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 200W TO247AD	Original	PDF		5
IXGH32N60BU1	IXYS	IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns	Original	PDF	139.7KB	6

IXGH32 Price and Stock

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Littelfuse Inc IXGH32N120A3 Trans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXGH32N120A3		150		150	1 - 10 - 100 - 1000 $6.41 10000 $6.41	Buy Now
Newark	IXGH32N120A3	Bulk	93		1	1 $13.54 10 $11.76 100 $7.61 1000 $6.88 10000 $6.88	Buy Now
RS	IXGH32N120A3	Bulk		8 Weeks	30	1 - 10 - 100 $10.80 1000 $10.80 10000 $10.80	Get Quote
Onlinecomponents.com	IXGH32N120A3					1 - 10 - 100 $11.77 1000 $5.62 10000 $5.62	Buy Now
IXYS Corporation IXGH32N170A IGBTs VRY HI VOLT NPT IGBT 1700V, 72A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGH32N170A		300			1 $32.47 10 $24.88 100 $24.88 1000 $22.69 10000 $22.69	Buy Now
TTI	IXGH32N170A	Tube			300	1 - 10 - 100 - 1000 $21.51 10000 $21.51	Buy Now
TME	IXGH32N170A				1	1 $24.63 10 $21.16 100 $19.34 1000 $19.34 10000 $19.34	Get Quote
IXYS Corporation IXGH32N120A3 IGBTs 32 Amps 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGH32N120A3		295			1 $13.82 10 $8.37 100 $8.37 1000 $7.55 10000 $7.55	Buy Now
TTI	IXGH32N120A3	Tube			30	1 - 10 - 100 $8.36 1000 $8.36 10000 $8.36	Buy Now
Bristol Electronics	IXGH32N120A3		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	IXGH32N120A3				1	1 $12.52 10 $12.52 100 $7.29 1000 $6.27 10000 $6.27	Get Quote
IXYS Corporation IXGH32N170 IGBTs 72 Amps 1700 V 3.3 V Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGH32N170		135			1 $27.37 10 $19.42 100 $19.42 1000 $18.13 10000 $18.13	Buy Now
TTI	IXGH32N170	Tube			30	1 - 10 - 100 $17.59 1000 $17.59 10000 $17.59	Buy Now
TME	IXGH32N170				1	1 $21.41 10 $17.69 100 $16.94 1000 $16.94 10000 $16.94	Get Quote
IXYS Corporation IXGH32N90B2 IGBTs 32 Amps 900V 2.7 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGH32N90B2					1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IXGH32 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC 247 B Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM Contextual Info: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25	OCR Scan	ixgh32n60cd1 ixgh32n60cd1s o-247 32n60cd1s +3bc 247 b ixgh32n60 diode smd gem	PDF
IXGH32N60C Abstract: 610MJ Contextual Info: Advanced Data _ HiPerFAST IGBT Lightspeed™ Series vCES IXGH32N60C IXGH32N60CS 600 V 60 A 2.1 V 55 ns ^C25 vCE sat typ * fi typ 4 Symbol Test Conditions V • ces TJ vcaR C Maximum Ratings 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£3	OCR Scan	ixgh32n60c ixgh32n60cs o-247 32n60cs +2o-247ad 610mj	PDF
Contextual Info: □ IXYS P re lim in a ry D ata S heet IXGH32N50B IXGH32N50BS HiPerFAST IGBT V CES ^C25 V CE sat t 'fi 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) m Symbol Test Conditions V CES Ta = 2 5 C to 150 C 500 V V ¥cgr T j = 2 5 C to 150 C; RGE= 1 M 500 V V v GES	OCR Scan	ixgh32n50b ixgh32n50bs o-247 32n50bs	PDF
diode lt 247 Abstract: IXGH32N60 Contextual Info: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C	OCR Scan	ixgh32n60cd1 ixgh32n60cd1s o-247 32n60cd1s +2diode lt 247 ixgh32n60	PDF
Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 32A VCE sat ≤ 2.35V IXGH32N120A3 IXGT32N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	ic110 ixgh32n120a3 ixgt32n120a3 o-268 +3o-247 32n120a3 3-04-11-a	PDF
smd diode 819 Abstract: rg33c Contextual Info: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES	OCR Scan	ixgh32n60bu1 ixgh32n60bu1s t0-247 o-247 +2smd diode 819 rg33c	PDF
IXGH32N60C Contextual Info: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	ixgh32n60c ixgh32n60cs o-247	PDF
IXGH32N60BU1 Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V = = = = 600 V 60 A 2.5V 80 ns TO-247 AD VGES Continuous ±20 V VGEM Transient	Original	ixgh32n60bu1 o-247	PDF
Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM	OCR Scan	ixgh32n50bu1 ixgh32n50bu1s o-247 32n50bu1s	PDF
1xgh32 Abstract: IXGH32N60B Contextual Info: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C	OCR Scan	ixgh32n60b ixgh32n60bs t0-247 32n60bs +11xgh32	PDF
32N60B Abstract: 32N60A N60B DIXYS IXGH32N60B Contextual Info: DIXYS HiPerFAST IG BT IXGH 32 N60A IXGH32 N60B VCES ^C25 VCE sat tfi 600 V 600 V 60 A 60 A 2.9 V 2.5 V 125 ns 80 ns Prelim inary data ÔE Sym bol Test C onditions Maximum Ratings V t ces Tj = 25°C to 150°C 600 V vt c g r Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	ixgh32 o-247 32n60a 32n60b +3n60b dixys ixgh32n60b	PDF
IXGH32N60B Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	ixgh32n60b o-247 32n60b 32n60bu1	PDF
32N60B Abstract: 32N60BU1 IXGH32N60B Contextual Info: □IX Y S j Prelim inary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 V CE sat tfi < Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v* GES v GEM Continuous ±20 V T ransient ±30 V Maximum Ratings	OCR Scan	ixgh32n60b ixgh32n60bs 13/ionm/lb o-247 +34bflb22b 32n60b 32n60bu1	PDF
smd diode UJ 64 A Abstract: cz 017 v3 Contextual Info: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90	OCR Scan	ixgh32n60bu1 ixgh32n60bu1s o-247 4bflb22b +2smd diode uj 64 a cz 017 v3	PDF

MJI-25 Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2	OCR Scan	ixgh32n50bu1 ixgh32n50bu1s o-247 32n50bu1s +1mji-25	PDF
TT 2146 Abstract: 3em smd 1520S smd 3EM Contextual Info: Preliminary Data Sheet IXGH32N50B IXGH32N50BS Hi Per FAST IGBT V C ES IC25 V CE sat 500 V 60 A 2.0 V 80 ns T 0 -2 4 7 SMD (32N 50B S ) Symbol TestC onditions v CES Td = 2 5 °C to 1 5 0 °C 500 V V CGR Td = 25°C to 150°C; RGE = 1 M il 500 V V GES Continuous	OCR Scan	ixgh32n50b ixgh32n50bs tt 2146 3em smd +21520s smd 3em	PDF
Contextual Info: Advance Technical Information GenX3TM 1000V IGBT IXGH32N100A3 IXGT32N100A3 VCES = 1000V IC25 = 75A VCE sat ≤ 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions VCES TC = 25°C to 150°C VCGR Maximum Ratings 1000	Original	ixgh32n100a3 ixgt32n100a3 o-247 o-268 +2ic110 338b2	PDF
IXGH32N50BU1 Abstract: IXGH32N50BU1S Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ixgh32n50bu1 ixgh32n50bu1s o-247 32n50bu1s	PDF
IXGH32N60B Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	ixgh32n60b o-247 32n60b 32n60bu1 +395566b ixgh32n60 to-247 ad	PDF
IXGH32N50B Abstract: IXGH32N50BS Contextual Info: Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V	Original	ixgh32n50b ixgh32n50bs o-247 32n50bs	PDF
Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Maximum Ratings = = = = 600 V 60 A 2.5V 80 ns TO-247 AD Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	ixgh32n60bu1 o-247	PDF
ixgh32n60 Abstract: MJ170 Contextual Info: HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS v CES ^C25 VCE sat typ ^fity p 600 V 60 A 2.1 V 55 ns Preliminary Data Sheet Symbol Test Conditions ^C E S Tj = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE = 1 MQ 600 V v CGR Maximum Ratings	OCR Scan	ixgh32n60c ixgh32n60cs o-247 32n60cs +2ixgh32n60 mj170	PDF
IXGT32N100A3 Abstract: IXGH32N100 GenX3TM IXGH32N100A3 Contextual Info: Advance Technical Information GenX3TM 1000V IGBT IXGH32N100A3 IXGT32N100A3 VCES = 1000V = 75A IC25 VCE sat ≤ 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions VCES TC = 25°C to 150°C VCGR Maximum Ratings 1000	Original	ixgh32n100a3 ixgt32n100a3 o-247 o-268 +4ic110 338b2 ixgh32n100 genx3tm	PDF
n60b Abstract: n60bu 32N60A Contextual Info: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C	OCR Scan	ixgh32 n60au1 n60au1s n60bu1s +6o-247 32n60 32n60au1 n60b n60bu 32n60a	PDF

IXGH32 Search Results

IXGH32 Datasheets (24)

IXGH32 Price and Stock

Littelfuse Inc IXGH32N120A3

IXYS Corporation IXGH32N170A

IXYS Corporation IXGH32N120A3

IXYS Corporation IXGH32N170

IXYS Corporation IXGH32N90B2

IXGH32 Datasheets Context Search

BC 247 B

IXGH32N60C

diode lt 247

smd diode 819

IXGH32N60C

IXGH32N60BU1

1xgh32

32N60B

IXGH32N60B

32N60B

smd diode UJ 64 A

MJI-25

TT 2146

IXGH32N50BU1

IXGH32N60B

IXGH32N50B

ixgh32n60

IXGT32N100A3

n60b