IXGH32N60 Search Results

BC 247 B

Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Contextual Info: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25

IXGH32N60C

Abstract: 610MJ
Contextual Info: Advanced Data _ HiPerFAST IGBT Lightspeed™ Series vCES IXGH32N60C IXGH32N60CS 600 V 60 A 2.1 V 55 ns ^C25 vCE sat typ * fi typ 4 Symbol Test Conditions V • ces TJ vcaR C Maximum Ratings 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£3

diode lt 247

Abstract: IXGH32N60
Contextual Info: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C

smd diode 819

Abstract: rg33c
Contextual Info: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES

IXGH32N60C

Contextual Info: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

IXGH32N60BU1

Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V = = = = 600 V 60 A 2.5V 80 ns TO-247 AD VGES Continuous ±20 V VGEM Transient

1xgh32

Abstract: IXGH32N60B
Contextual Info: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C

IXGH32N60B

Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM

32N60B

Abstract: 32N60BU1 IXGH32N60B
Contextual Info: □IX Y S j Prelim inary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 V CE sat tfi < Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v* GES v GEM Continuous ±20 V T ransient ±30 V Maximum Ratings

smd diode UJ 64 A

Abstract: cz 017 v3
Contextual Info: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90

Contextual Info: IXGH32N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)60# Absolute Max. Power Diss. (W)200# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.62 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.15

IXGH32N60B

Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD
Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM

Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Maximum Ratings = = = = 600 V 60 A 2.5V 80 ns TO-247 AD Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient

ixgh32n60

Abstract: MJ170
Contextual Info: HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS v CES ^C25 VCE sat typ ^fity p 600 V 60 A 2.1 V 55 ns Preliminary Data Sheet Symbol Test Conditions ^C E S Tj = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE = 1 MQ 600 V v CGR Maximum Ratings

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

IXGD32N60B-5X

Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43

IXGD40N60A

Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Contextual Info: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60

KM10T

Contextual Info: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: IXGH 32N60A IXGH 32N60AS HiPerFAST IGBT = = = = CES v C25 CE sat tfi 600 V 60 A 2.9 V 125 ns *4 $ Maximum IRatings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CQR Tj = 25°C to 150°C; RGE = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE sat tfi typ = 600 V = 60 A = 2.5 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C

Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms