32N60C Search Results

IXGH32N60C

Abstract: 32N60C IXGH32N60
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C

Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat typ tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V

Contextual Info: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms

Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package VCE IC25 VCE sat typ tfi typ (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

32N60CD1

Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms

KM10T

Contextual Info: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous

32N60CD1

Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings IC25 TC = 25°C 60 A IC90 TC = 90°C 32

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE sat tfi typ = 600 V = 60 A = 2.5 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C

Contextual Info: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode VCE SAT typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: a ix Y S Advanced Technical Information IXGH 32N60CD1 VCES IC25 HiPerFAST IGBT with Diode V CE SAT typ Light Speed Series Symbol t f1(typ) Test Conditions Maximum Ratings =25° C to 150° C 600 V T, : 25°C to 150°C: FL 600 V Continuous ±20 V Transient

Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

32N60CD1

Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C

2x31-06B

Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V

Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

Contextual Info: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

ge motor 752

Abstract: IXGH32N60
Contextual Info: Q T X Y<*JLS w B w A- 4>C HiPerFAST IGBT Lightspeed™ Series IXGH 32N60C IXGT 32N60C VCES ^C25 V CE sat typ fi typ 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ

32N60CD1

Abstract: 30-1000T
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 VCE SAT typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V

Contextual Info: □ IXYS H H ifl JL æ* X IXGH 32N60CD1 HiPerFAST IGBT with Diode VCES I C25 VCE SAT typ tf1(typ) Light Speed Series V A V ns 600 60 2.1 55 Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i

20-600T

Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C

32N60CD1

Abstract: diode fr 307
Contextual Info: IXGH 32N60CD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE SAT typ tf1(typ) Light Speed Series = 600 V = 60 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

32N60CD1

Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM = 600 V = 45 A = 2.1 V = 55 ns VCES IC25 IXGR 32N60CD1 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

IXGR32N60CD1

Contextual Info: □ TXYS HHifl JLæ* 3k. X HiPerFAST IGBT with Diode ISOPLUS247™ IXGR 32N60CD1 = 600 V = 45 A = 2.1 V = 55 ns V,CES IC25 V CE SAT typ ^fi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol TestC onditions V C ES Tj = 25°C to 150°C 600