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95566B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGH32N60B Contextual Info: nixYS IXGH 32N60B HiPerFAST IGBT CES C25 VCE sat Symbol Test C onditions v CES T j = 25° C to 150c C 600 V V CGR T j = 25° C to 150° C; RGE = 1 M n 600 V v GES Continuous +20 V VGEM Transient ±30 V ^C25 T c = 25° C 60 A ^C9G T c = 9 0 °C Maximum Ratings	OCR Scan	32n60b o-247ad o-247 32n60bu1 +1ixgh32n60b	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	plus247 20n30 28n30 30n30 +1540n30 31n60 38n60 41n60 60n60 o-264 200n60 n60c 50n60 7n60b ic igbt 25n120 ic600 80n60 60n60 igbt 25n120	PDF
IXGH32N60B Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	ixgh32n60b o-247 32n60b 32n60bu1	PDF
IXGH32N60B Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD Contextual Info: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	ixgh32n60b o-247 32n60b 32n60bu1 +395566b ixgh32n60 to-247 ad	PDF