50N60AU1 Search Results

Contextual Info: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

50n60

Abstract: ixsk50n60au1 50N60AU1
Contextual Info: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings

Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20

Contextual Info: D IX Y S IXSX 50N60AU1 IGBT with Diode VCES = 600 V •ca PLUS 247 package = 75A W 2JV Short Circuit S O A Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T j =25°Cto 150°C 600 V vCQR Tj = 25°Cto 150°C; RG6 = 1 Mi2 600 V VGES

60N60A

Abstract: c5021-0
Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90

mj 340

Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Contextual Info: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM

C8750

Contextual Info: m xY S IGBT with Diode IXSK 50N60AU1 VCES I C25 v* CE sat Short Circuit S O A Capability 600 V 75 A 2.7 V ?c G OE Maximum Ratings Symbol Test Conditions VCES T0 = 25° C to 150° C 600 V VCGR Tj = 25° C to 150°C; RGE= 1 Mi2 600 V VGES VGEM Continuous ±20

Contextual Info: XYS IGBT with Diode vC E S IXSK 50N60AU1 ^C 25 v C E sat = 600V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RQE = 1 600 V v GES Continuous ±20 V v GEM

Contextual Info: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads

931 diode smd

Abstract: 50n60 IXGX50N60AU1 50N60AU1 IXGX50N60AU1S ic 931
Contextual Info: Preliminary data HiPerFASTTM IGBT with Diode 50N60AU1 50N60AU1S Combi Pack VCES IC25 VCE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20

50n60

Abstract: 50N60AU1
Contextual Info: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Advanced Technical Information Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600

50N60

Abstract: 50N6
Contextual Info: IGBT with Diode vCES 50N60AU1 50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2

50N60AU1

Contextual Info: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads 75 A I C90

mj 340

Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
Contextual Info: Preliminary data VCES = 600 V 50N60AU1 = 75 A 50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

IXGH50N60A

Abstract: 100-200Q IXGH50N60AS
Contextual Info: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous

50N6

Abstract: 50N60A IXGH50N60A
Contextual Info: o ix y s HiPerFAST IGBT IXGH 50N60A VCES IC25 V— tfi Surface Mountable = 600 V = 75 A = 2.7 V = 275 ns ÔE Maximum Ratings Symbol Test Conditions V CEs T j = 2 5 °C to 1 5 0 °C 600 V Vce„ T ,J = 2 5 ° C to 15 0 °C; R jfc „ = 1 MQ 600 V v GES Continuous

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

SMD diode b24

Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Contextual Info: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62

120n60b

Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *