50N60A2D1 Search Results

IXGK50N60A2D1

Contextual Info: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES

50n60

Abstract: 50N60A IF110 PLUS247
Contextual Info: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES

50N60A

Abstract: IF110 PLUS247 IXGX50N60A2U1
Contextual Info: Advance Technical Information IGBT with Diode IXGK 50N60A2U1 VCES IXGX 50N60A2U1 IC25 VCE sat Low Saturation Voltage IGBT with Low Forward Drop Diode = 600 V = 75 A = 1.6 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C