RM338
Abstract: qfl 289 106N20 IXFK90N20
Contextual Info: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2
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ixfk90n20ixfn106n2090n20106n20+5200ns20mi2d68623rm338qfl 289
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6 r 360
Abstract: 106N20 100n20 IXFK90N20
Contextual Info: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions
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ixfk90n20ixfn100n20ixfn106n20o-264+690n20100n20106n20cto15050drain6 r 360
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106N20
Abstract: 90N20 IXFN 360 D-68623
Contextual Info: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions
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90n20106n20200nso-264+2d-68623ixfn 360
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IRM-38
Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings
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o-26490n20100n20106n20+5ixfn90n20ixfn106n20irm-38ixfk90n20ixfn100n20
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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100n1090n2073n3044n50+1448n5036n6067n1075n1042n2050n20mosfet 4400mosfet 11n80mosfet 20n607n8020n60 mosfet4800 mosfetmosfet 4800 circuit4500 mos
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76n07-1176n07-1267n1075n10+1442n2050n2058n20o-247o-20475n16n80ixtm20n60irfp 260 mixfhk 15n60ixtn 44n50ks 4400204 3b
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10a52-14n0152-16n0155-12n+1655-14n0755-18n60-08n60-16n62-08n62-12n40n8013nb060n60dsei 20-1233n120vuo 35-12 n 0 7ds117-12ads117-1226n604410pi
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ixys ixfn 55n50
Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01
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o-247t0-204o-26476n06-11+1475n06-12110n0676n07-1176n07-12ixys ixfn 55n50170n10c1106ixfh26n50c1124ixfn170n10c112015n10076n06ixfn36n60
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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o-247plus247isoplus247tmo-204+15o-268o-26476n06-1176n06-1280n06180n06c1162c128026n6060n25c1328120n20c1146c1104c1158
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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o-247plus247isoplus247tmo-268+16o-26480n06-1176n07-1176n07-12100n10170n10sd 20n60ixfx 44n8020n8060n609n80c2625power mosfet 100n20ixfh32n50230n108n80
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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axc-051axc-053axc-101axc-102+16axl-001axl-051axv-102142-12io8142-16io819-08ho17n60b35n120u1ixys dsei 45-12adsdi 35-12a20n8080n0680n60vvy 40-16io1ixys cs 2-12ixfx 44n80
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mosfet 4800
Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055
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200n06200n07150n10100n20+15106n2073n3044n5048n5058n5061n50mosfet 4800ixfn27n80ixfn44n50rd5aco7014800 power mosfetixfn36n60ixfm40n30ixfm35n30
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8n80
Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1
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cs1011-18io1cs1011-22io1cs1011-25io1+16cs1250-12io1cs1250-14io1cs1250-16io1cs20-12cs20-14cs20-168n80ds117-12a36-18n16go20n60a2qn6062-16n07dsa117-1210n60amcc95-12io1b
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100N20
Abstract: t 227 fk90 ax2002 t227 106N20 IXFK90N20
Contextual Info: p V DSS HiPerFET Power MOSFETs ix f k 90 n 20 IXFN100 N 20 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 200 V 90 A 100 A 200 V 200 V 106 A trr < 200 ns DS on 23 mû 23 mQ 20 m£2 TO -264 A A (IXFK) Sym bol Test C onditions
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ixfn100ixfn106n2090n20100n20+8106n20t-227ixfn100n20t 227fk90ax2002t227ixfk90n20
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mm036
Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA
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dsai35-12a5-16a5-18a5-12a+142-06a12-1oa2-12a2x30-q4cmm036ml075-12mm036-12mm036-16mm075-12io1mm062dsi 12-06amdd95-16n1bme0321n100
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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o-247plus247isoplus247tmo-204+16o-268o-26476n06-1176n06-1280n06180n06c1146c1162c1278c1106c1156ixfh 60n60c1142c1238c1104ixfn 26n60
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IXFK100N20
Abstract: 100N20 IXFK90N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings
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IXFK90N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings
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o-26490n20100n20106n20+34000n20ixfn106n20ixfk90n20
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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76n06-1176n07-1176n07-1267n10+1675n1050n2058n2074n2080n2035n3052n3020n80ixfh 60n60ixfx 44n8015n107n80e51g44n8060n6046n50
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67n1075n1075n10q80n10q+16o-247plus247isoplus247tmo-268o-26480n06-11c1218c1222ixfh 60n60ixfx 44n80c1138c123820n80c1228c1172ixfn 230n10 230n10
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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axc-051axc-051-raxc-102axv-002+16015-14to12x45-16io12x60-08io12x60-12io12x60-14io12x60-16io1dse 130 -06avub 70-12ixgh 30n120vub 70-1630n60b80n1012n60cddsei 30-16 asdsep 15-06a13n50
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