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IXYS Corporation


IXYS Corporation IXFK44N80P MOSFETs 44 Amps 800V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXFK44N80P		253			1 $25.86 10 $17.35 100 $17.35 1000 $17.35 10000 $17.35	Buy Now
	IXFK44N80P		253			1 $26.68 10 $17.13 100 $17.13 1000 $17.13 10000 $17.13	Buy Now
Newark	IXFK44N80P	Bulk	383		1	1 $28.28 10 $21.74 100 $16.81 1000 $16.41 10000 $16.41	Buy Now
TTI	IXFK44N80P	Tube			300	1 - 10 - 100 - 1000 $15.24 10000 $15.24	Buy Now
TME	IXFK44N80P		16		1	1 $24.73 10 $17.79 100 $15.33 1000 $15.33 10000 $15.33	Buy Now
IXYS Corporation IXFX44N80P MOSFETs 44 Amps 800V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXFX44N80P		163			1 $26.62 10 $17.30 100 $17.30 1000 $17.30 10000 $17.30	Buy Now
	IXFX44N80P		163			1 $26.62 10 $17.30 100 $17.30 1000 $17.30 10000 $17.30	Buy Now
TTI	IXFX44N80P	Tube			300	1 - 10 - 100 - 1000 $14.96 10000 $14.96	Buy Now
Bristol Electronics	IXFX44N80P		30		1	1 $15.24 10 $12.19 100 $11.43 1000 $11.43 10000 $11.43	Buy Now
TME	IXFX44N80P				1	1 $20.80 10 $15.53 100 $14.81 1000 $14.81 10000 $14.81	Get Quote
IXYS Corporation IXFN44N80P MOSFET Modules 36 Amps 800V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXFN44N80P		102			1 $39.85 10 $28.72 100 $28.72 1000 $28.72 10000 $28.72	Buy Now
	IXFN44N80P		102			1 $39.85 10 $28.72 100 $28.72 1000 $28.72 10000 $28.72	Buy Now
TTI	IXFN44N80P	Tube			300	1 - 10 - 100 - 1000 $24.76 10000 $24.76	Buy Now
TME	IXFN44N80P				300	1 - 10 - 100 - 1000 $25.29 10000 $25.29	Get Quote
Vyrian	IXFN44N80P		344			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFR44N80P MOSFETs DIODE Id26 BVdass800
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXFR44N80P					1 - 10 - 100 - 1000 $18.59 10000 $18.59	Get Quote
	IXFR44N80P					1 - 10 - 100 - 1000 $18.59 10000 $18.59	Get Quote
TTI	IXFR44N80P	Tube			300	1 - 10 - 100 - 1000 $18.35 10000 $18.35	Buy Now
TME	IXFR44N80P				1	1 $22.02 10 $22.02 100 $18.96 1000 $18.96 10000 $18.96	Get Quote
IXYS Corporation IXFX44N80Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/44A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXFX44N80Q3					1 - 10 - 100 - 1000 $38.61 10000 $38.61	Get Quote
	IXFX44N80Q3					1 - 10 - 100 - 1000 $38.61 10000 $38.61	Get Quote
TTI	IXFX44N80Q3	Tube			300	1 - 10 - 100 - 1000 $38.22 10000 $38.22	Buy Now
TME	IXFX44N80Q3				1	1 $50.15 10 $39.94 100 $35.86 1000 $35.86 10000 $35.86	Get Quote

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44N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFX 44N80P Abstract: 44N80P ixfk44n80p IXFX44N80P 44N80 PLUS247 44n8 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V	Original	44N80P IXFX 44N80P 44N80P ixfk44n80p IXFX44N80P 44N80 PLUS247 44n8	PDF
44N80 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	ISOPLUS264TM 44N80 728B1 123B1 728B1 065B1 44N80	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous	Original	44N80P	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V	Original	44N80P	PDF
44N80 Abstract: 125OC Contextual Info: IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on = 800 V = 44 A = 0.165 Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44N80 OT-227 E153432 728B1 44N80 125OC	PDF
Contextual Info: Advanced Technical Information IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44N80 OT-227	PDF
44N80 Abstract: 44N80P "SOT-227 B" dimensions Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous	Original	44N80P 44N80 44N80P "SOT-227 B" dimensions	PDF
IXFX 44N80P Abstract: 44n8 max2743 IXFK44N80P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 800 800	Original	44N80P 44N80P O-264 PLUS247 IXFX 44N80P 44n8 max2743 IXFK44N80P	PDF
44N80P Abstract: ISOPLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44N80P 44N80P ISOPLUS247	PDF
Contextual Info: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single MOSFET Die IXFN 44N80 DSS I D25 RDS on 800 V 44 A 0.145 a N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions vt d s s T j =25°C to150°C 800 V Voon T u = 25° C to 150° C i R ^ I M il	OCR Scan	IXFN44N80 to150 OT-227 E153432	PDF
44N80 Abstract: 98594 Contextual Info: IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on = 800 V = 44 A = 0.165 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	44N80 44N80 98594	PDF
Contextual Info: □ IXYS Advanced Technical Information IXFN 44N80 HiPerFET Power MOSFETs Single MOSFET Die V.DSS I D25 R,DS on 800 V 44 A 0.145 Q 9D N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions V DSS Td = 25°C to 150°C	OCR Scan	44N80	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V	Original	44N80P	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	ISOPLUS264TM 44N80 150unless 728B1 123B1 728B1 065B1	PDF

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	44N80P	PDF
44n8 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die IXFN 44N80 VDSS ID25 RDS on = 800 V = 44 A = 0.145 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	44N80 OT-227 E153432 44n8	PDF
Contextual Info: 44N80 Power MOSFET HiPerFETTM Single MOSFET Die VDSS ID25 RDS on = 800V = 44A ≤ 0.165Ω Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN44N80 OT-227 E153432 44N80 100kHz 125OC	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60	PDF
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50	PDF
C1218 Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268	OCR Scan	67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10	PDF

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44N80 Price and Stock

IXYS Corporation IXFK44N80P

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