52N30 Search Results

52N30

Abstract: IXFH 52N30q 52N30Q TO264 footprint
Contextual Info: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class RDS on t rr = 300 V = 52 A = 60 mW £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances TO-247 AD (IXFH)

Contextual Info: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions

52N30P

Abstract: PLUS220SMD th2005
Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 52N30P VDSS IXFV 52N30P ID25 IXFV 52N30PS RDS on trr TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

T0247A

Contextual Info: DIXYS AdvancedTechnical Information IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q-Class Vw DSS ^D25 R DS on *rr = 300 V " 52 A — 60 m f t — ^ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances

Contextual Info: □ IXYS Advanced Technical Information IXFH 52N30Q IX F K 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q -Class V,DSS ^D25 R DS on t = 300 V = 52 A = 60 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances

mosfet 52n30p equivalents

Abstract: 52N30P PLUS220SMD
Contextual Info: Advanced Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 52N30P IXFV 52N30P IXFV 52N30PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transinet ±30

52n30p

Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30
Contextual Info: Advanced Technical Information 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

52N30P

Contextual Info: Advanced Technical Information 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

1M300

Abstract: 52N30 52N30P IXFC52N30P
Contextual Info: Advance Technical Information 52N30P PolarHTTM HiPerFET Power MOSFET VDSS ID25 RDS on = 300 V = 32 A Ω = 75 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS VGSM

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS ID25 52N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300 24 75 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Contextual Info: 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V

52n30p

Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
Contextual Info: 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205

Contextual Info: Advanced Technical Information 52N30P 52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70