T0247A Search Results

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

Contextual Info: DI OT EC E L E C T R O N I C S CORP SfiE V EflMTlO? GGOGIST ^bl « » I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

Contextual Info: SflE T> • DIOTEC ELECTRONICS CORP 204^107 GDDD171 HbT « D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No.: FSDP-301-A3 ✓"'P'. r>7. - \ ^ 1 3 AMP HIGH RELIABILITY FAST RECOVERY DIODES

Contextual Info: BIOTEC ELECTRONICS CORP SflE D • 2 f l i m D 7 DD0D1S5 E l b « D I X DIOTEC ELECTRON ICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-101-A 0 'S - 1 !> 1 AMP FAST RECOVERY SILICON DIODES

Contextual Info: PD-9.1583 International TOR Rectifier IRG4PC50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 [is@ 125°C, VGE = 15V

T0247AC

Contextual Info: kitemational PD 9.1409 SRectifier IRFP048N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = 0.016Î2 lD = 62A Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

Contextual Info: PD - 9.1459A International TGR Rectifier IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

Contextual Info: International M R Rectifier PD - 9 . 1 4 6 1 C IRG4PC30U PRELIMINARY U ltraFast Speed INSULATED GATE BIPOLAR TRANSISTOR IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

30UFR01

Abstract: 30UFR02 30UFR03 30UFR04 30UFR05 ADIX
Contextual Info: DIOTEC ELECTRONICS CORP EfiimD? GDOÜOb3 401 « D I X SÛE » DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: SESA-3002-A -T '-a v -v * TQ-247 (TQ-3P) 30 AMP SUPER-EFFICIENT RECTIFIERS

CS19-12H01

Abstract: CS8-12I02 CS45-16I01 TO-208AA CS23-08I02 T0-208AA CS19-12 T0208AA CS23 T0220AB
Contextual Info: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TMpMCTOpbl $MpMbl IXYS np0M3B0flMTenb : IXYS f lM a n a 3 0 H p a 6 o H M X T e M n e p a iy p : o t - 4 0 ° a o K o fl: Tok CS8-12I02 CS19-12H01 CS23-08I02 CS45-16I01 [A] 25,0 29,0 50,0 75,0 HanpflweHMe

BYV255V200

Abstract: BYV255V-200 BYV54V200 DSEI2X61-12B BYV54V-200 DSEI2X121-02A 2X10 BYV42-200 BYV52PI200 DSEI2X31-06C
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics jen\ 495 739-09-95, 644-41-29 f lB O M H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: [A] Hanp. [B] BYV255V200 BYV54V200 2x100 2x50 200 200 H eT K a T O fl ISOTOP v J P DSEI2X121-02A DSEI2X31-06C DSEI2X101-06A

ADB 820

Abstract: tube dt41
Contextual Info: DIOTEC ELECTRONICS CORP SflE D I 2 f lim [ ] 7 0GD010Û 4TT « D I X DIOTEC ELEC TR O N IC S C O R P . Data Sheet No.: BRDB-2500-A ABDB-2500-A 18020 Hobart Blvd., Unit B Gardena, C A 90248 Tel.: 310 767-1052 Fax: (310)767-7958 T - 2 . V Û D B2500/ADB2500 S erie s

SOT227B

Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
Contextual Info: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]

SK107

Abstract: CASH BOX GUARD SK107 d2 SK107 J T0247 SK102 SK104 SK106 SK108 SK110
Contextual Info: DIOTEC E L E C T R O N I C S CORP ess SflE » • 2Ô4T1D7 OOOOOCH I DIX MSS DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: SBDA-102-A 1 AMP SCHOTTKY BARRIER RECTIFIERS FEATURES:

BL 05A

Abstract: RP158 RP150 RP151 RP1510 RP152 RP154 RP156 DIA DB3 bh 27 601
Contextual Info: DIOTEC ELECTRONICS CORP SÔE D 2fl4RlG7 OGOOlbB 3TE H D I X DIOTEC ELECTRONICS CORP. n T P u x u Data Sheet No.: FSDP-151-A 18020 Hobart Blvd., Unit 6 Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 'T '- Q 1.5 AMP FAST RECOVERY SILICON DIODES VOLTAGE RANGE

30CPQ045

Abstract: bl2040 d181 thermal 30CPQ035 30CPQ040 30CPQ050 30CPQ060 ftcs M7 RECTIFIER
Contextual Info: PD-2.297 30CPQ040 30CPQ045 [tcrI Rectifier SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics 30 A 35/40/45 V lpSM tp -5 issine 1020 A VF 0.50 V -55to150 °C VRRM ®15Apk,Tj-125°C (per leg TJ C A S E ST Y LE AN D D IM EN SIO N S 5.30(0.209)

30CPQ050

Abstract: 7096N 40CPQ035 30CPQ045 40CPQ040
Contextual Info: -NTCëNA^pîj», R-.C :iM£t International IO R Rectifier Schotfky Diodes AfcM'flRSAÎT iï-d? ;V9.' Port Number V rrm V •fav @ tc W (C) Vf * @ * F * 25°C (mA) 1RM @tytWM Max Tj e as ' ar 25°C (mA) (°C) (mJ) (A) Notes Through-Hole Packages Fax on Demand

LS T73

Abstract: BFC42
Contextual Info: nil IF t i mi BFC42 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 209) 1 4» (0 0S8) rD i t 3S5 (0 140) 3 81 {Q 150) VDSS 1 (0 040) ^ Terminal 1 Terminal 3 I

IRFI530

Abstract: IRFI840 IRFIP450 TO-247 FULLPAK Package IRFIP244
Contextual Info: HEXFET International ül ]Rectifier Power MOSFETs FullPak N-Channel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines, these devices are designed to provide ease of use, lower costs of

T0247AC

Abstract: IRFP450LC irfp9240
Contextual Info: HEXFET International Power MOSFETs liôR R ectifier TO-247AC Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-247AC N-Channel “Low Charge” Part Number IRFP350LC IRFP360LC IRFP450LC IRFP460LC

TQ-220AB

Abstract: SMD-220 SMD220
Contextual Info: IGBTs In te rn a tio n a l liQRRectifier IGBT Case Styles T0-247AC TQ-220AB H-10 SMD-220

Contextual Info: International B Rectifier HEXFRED Provisional Data Sheet PD-2.361 HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M ajor Ratings and Characteristics per Leg Characteristics Units Vr 1200 V 8 .0 A V rrm I f AV) trr (typ) 28 ns Q rr (typ) 140 nC I rrm (typ)