IRFPC60LC Search Results

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

IRFPC60LC-P

Contextual Info: PD - 99438 IRFPC60LC-P HEXFET Power MOSFET l l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated D VDSS = 600V RDS on = 0.40Ω

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

Contextual Info: International ^Rectifier P D - 9.1234 IRFPC60LC H EXFET Power M O S F E T • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced CjSS, Coss, Cres Isolated Central Mounting Hole Dynamic dv/dt Rated

IRFPC60LC

Abstract: IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

035H

Abstract: IRFPE30
Contextual Info: PD - 94878 IRFPC60LCPbF • Lead-Free www.irf.com 1 12/9/03 IRFPC60LCPbF 2 www.irf.com IRFPC60LCPbF www.irf.com 3 IRFPC60LCPbF 4 www.irf.com IRFPC60LCPbF www.irf.com 5 IRFPC60LCPbF 6 www.irf.com IRFPC60LCPbF www.irf.com 7 IRFPC60LCPbF TO-247AC Package Outline

Contextual Info: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

035H

Abstract: IRFPE30
Contextual Info: PD - 94878 IRFPC60LCPbF • Lead-Free Document Number: 91244 12/9/03 www.vishay.com 1 IRFPC60LCPbF Document Number: 91244 www.vishay.com 2 IRFPC60LCPbF Document Number: 91244 www.vishay.com 3 IRFPC60LCPbF Document Number: 91244 www.vishay.com 4 IRFPC60LCPbF

035H

Abstract: IRFPE30 IRFPC6
Contextual Info: PD - 94878 IRFPC60LCPbF • Lead-Free Document Number: 91244 12/9/03 www.vishay.com 1 IRFPC60LCPbF Document Number: 91244 www.vishay.com 2 IRFPC60LCPbF Document Number: 91244 www.vishay.com 3 IRFPC60LCPbF Document Number: 91244 www.vishay.com 4 IRFPC60LCPbF

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve

035H

Abstract: IRFPE30
Contextual Info: PD - 94878 IRFPC60LCPbF • Lead-Free www.irf.com 1 12/9/03 IRFPC60LCPbF 2 www.irf.com IRFPC60LCPbF www.irf.com 3 IRFPC60LCPbF 4 www.irf.com IRFPC60LCPbF www.irf.com 5 IRFPC60LCPbF 6 www.irf.com IRFPC60LCPbF www.irf.com 7 IRFPC60LCPbF TO-247AC Package Outline

IRFPC60LC

Abstract: SiHFPC60LC IRFPC6
Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60LC_RC, SiHFPC60LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

mosfet 600V 16A

Abstract: IRFPC60LC IRFPE30
Contextual Info: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω

IRFPC60LC

Abstract: SiHFPC60LC
Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve

Contextual Info: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve

IRFPC60LC

Abstract: IRFPE30
Contextual Info: PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.40 Ω

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for