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IXTQ52N30P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTQ52N30P		IXYS	Discrete MOSFETs: Standard N-channel Types	Original	PDF	585.56KB	5

IXTQ52N30P Price and Stock

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IXYS Corporation IXTQ52N30P MOSFET N-CH 300V 52A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ52N30P	Tube			1	1 $8.69 10 $8.69 100 $5.05 1000 $3.67 10000 $3.50	Buy Now
Mouser Electronics	IXTQ52N30P		270			1 $8.29 10 $5.67 100 $5.67 1000 $4.00 10000 $4.00	Buy Now
Newark	IXTQ52N30P	Bulk	300		1	1 $10.02 10 $8.63 100 $5.82 1000 $4.91 10000 $4.91	Buy Now
TTI ()	IXTQ52N30P	Tube			300	1 - 10 - 100 - 1000 $4.00 10000 $4.00	Buy Now
	IXTQ52N30P	Tube			300	1 - 10 - 100 - 1000 $4.00 10000 $4.00	Buy Now
Quest Components	IXTQ52N30P		240			1 $12.97 10 $12.97 100 $10.09 1000 $9.22 10000 $9.22	Buy Now

TME	IXTQ52N30P				1	1 $7.90 10 $5.83 100 $4.40 1000 $4.24 10000 $4.24	Get Quote
Littelfuse Inc IXTQ52N30P Trans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXTQ52N30P		300		14	1 - 10 - 100 $5.25 1000 $5.09 10000 $5.09	Buy Now
RS	IXTQ52N30P	Bulk		8 Weeks	30	1 - 10 - 100 $5.14 1000 $4.98 10000 $4.98	Get Quote
Onlinecomponents.com	IXTQ52N30P					1 - 10 - 100 $5.60 1000 $3.84 10000 $3.84	Buy Now
Quest Components	IXTQ52N30P		240			1 $10.93 10 $10.93 100 $6.74 1000 $6.01 10000 $6.01	Buy Now

IXTQ52N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
52n30p Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30 Contextual Info: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300	Original	IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30	PDF
52N30P Contextual Info: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM	Original	IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P	PDF
ixtq52n30p Abstract: IXTT52N30P Contextual Info: PolarTM Power MOSFETs IXTT52N30P IXTQ52N30P VDSS ID25 RDS on = 300V = 52A   73m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXTT52N30P IXTQ52N30P O-268 52N30P ixtq52n30p IXTT52N30P	PDF
Contextual Info: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V	Original	IXTQ52N30P IXTT52N30P O-268 52N30P	PDF
52n30p Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P Contextual Info: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous	Original	IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P	PDF