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IXTT52N30P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTT52N30P		IXYS	Discrete MOSFETs: Standard N-channel Types	Original	PDF	585.56KB	5

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IXYS Corporation IXTT52N30P Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTT52N30P				1	1 $7.66 10 $6.09 100 $5.48 1000 $5.48 10000 $5.48	Get Quote
Mouser Electronics ()	IXTT52N30P					1 - 10 - 100 - 1000 $7.14 10000 $7.14	Get Quote
	IXTT52N30P					1 - 10 - 100 - 1000 $7.10 10000 $7.10	Get Quote
TTI	IXTT52N30P	Tube			300	1 - 10 - 100 - 1000 $7.10 10000 $7.10	Buy Now
Littelfuse Inc IXTT52N30P Disc Mosfet N-CH Std-Polar TO-268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXTT52N30P	Bulk		8 Weeks	30	1 - 10 - 100 $9.72 1000 $9.72 10000 $9.72	Get Quote
Onlinecomponents.com	IXTT52N30P					1 - 10 - 100 $10.59 1000 $5.05 10000 $5.05	Buy Now

IXTT52N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
52n30p Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30 Contextual Info: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300	Original	ixtq52n30p ixtt52n30p 52n30p 1m300 +152n30	PDF
52N30P Contextual Info: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM	Original	ixtq52n30p ixtt52n30p o-268 52n30p	PDF
ixtq52n30p Abstract: IXTT52N30P Contextual Info: PolarTM Power MOSFETs IXTT52N30P IXTQ52N30P VDSS ID25 RDS on = 300V = 52A   73m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M	Original	ixtt52n30p ixtq52n30p o-268 52n30p	PDF
Contextual Info: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V	Original	ixtq52n30p ixtt52n30p o-268 52n30p	PDF
52n30p Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P Contextual Info: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous	Original	ixtq52n30p ixtt52n30p o-268 52n30p +2mosfet 52n30p equivalents mosfet ixtq52n30p	PDF