90N20 Search Results

RM338

Abstract: qfl 289 106N20 IXFK90N20
Contextual Info: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings

ax2002

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFK 90N20Q IXFX 90N20Q ^D25 R Q Class DS on = 200 V = 90 A = 22 m ii t < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Q High dv/dt,Low t Symbol Test C onditions M axim um Ratings V OSS

Contextual Info: IPIXYS Advanced Technical Information IXFK 90N20Q IXFX 90N20Q HiPerFET Power MOSFETs Q Class = 200 V = 90 A DSS ^D25 P DS on * rr = 2 2 m ß < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg High dv/dt,Low trr Symbol Test Conditions Maximum Ratings

6 r 360

Abstract: 106N20 100n20 IXFK90N20
Contextual Info: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions

IXFX 90N20Q

Abstract: 90N20Q 90n20
Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings

IXFX 90N20Q

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = 200 V = 90 A = 22mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data Symbol Test Conditions

Contextual Info: Advanced Technical Information HiPerFET TM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A 22 mW Q-CLASS RDS on Single MOSFET Die trr £ 200 ms N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol

106N20

Abstract: 90N20 IXFN 360 D-68623
Contextual Info: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions

90N20Q

Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings

IXFX 90N20Q

Abstract: 90N20Q
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 90N20Q IXFK 90N20Q VDSS ID25 = = = 200 V 90 A Ω 22 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 200 µs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX)

IRM-38

Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

70N15A

Abstract: 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N26BA
Contextual Info: #5. P179-198 02.2.5 4:14 PM ページ 184 CRYSTAL FILTERS 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

Contextual Info: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXfk 75 N 50

Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1