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IXYS Corporation IXFH12N90P Mosfet, n Ch,900V,12A, to-247; \|Ixys Semiconductor IXFH12N90P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFH12N90P	Bulk			300	1 - 10 - 100 - 1000 $9.70 10000 $9.70	Buy Now
TTI	IXFH12N90P	Tube			300	1 - 10 - 100 - 1000 $6.98 10000 $6.98	Buy Now
TME	IXFH12N90P				1	1 $10.84 10 $8.35 100 $6.21 1000 $5.84 10000 $5.84	Get Quote
Littelfuse Inc IXFH12N90P DiscMosfetN-CH HiPerFET-Polar TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXFH12N90P	Bulk		8 Weeks	30	1 - 10 - 100 $9.70 1000 $9.70 10000 $9.70	Get Quote
ABB Group ACL-1171-2N90 ALUMINUM COMPRESSION TERMINAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	ACL-1171-2N90				1	1 $356.78 10 $323.48 100 $323.48 1000 $323.48 10000 $323.48	Buy Now
IXYS Corporation IXGH12N90C IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	IXGH12N90C		2,310			1 $5.23 10 $5.23 100 $3.92 1000 $3.40 10000 $3.40	Buy Now
Unisonic Technologies Co Ltd 12N90G-TF1-T MOSFETs; 12N90G-TF1-T; UTC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Maritex	12N90G-TF1-T		80		5	1 $0.83 10 $0.83 100 $0.83 1000 $0.61 10000 $0.61	Buy Now

12N90 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10N90 Contextual Info: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient	Original	12n90 o-204 o-247 10n90	PDF
Contextual Info: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V ID25 = 12 A RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient	Original	12n90 o-204 o-247	PDF
12n90c Abstract: 125OC Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C	Original	12n90c 728b1 123b1 065b1 +1125oc	PDF
Contextual Info: HiPerFASTTM IGBT Lightspeed TM Series Symbol Test Conditions IXGH 12N90C Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	12n90c o-247 728b1	PDF
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	12n90c o-247 728b1	PDF
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C	Original	12n90c o-247 728b1 123b1 +1065b1	PDF
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 900 V VCGR T J = 25°C to 150°C; RGE = 1 MW 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	12n90c	PDF
L1047 Abstract: 12N90Q D1488 Contextual Info: IZIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 D DS on = 900 V = 12 A = 0.9 Q t rr < 200 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V DSS Td = 25°C to 150°C	OCR Scan	12n90q o-247ad o-268 l1047 +1d1488	PDF
12n90 Abstract: 10N90 4048-A Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 10N90 12N90 10 12	Original	10n90 12n90 4048-a	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET  The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in	Original	12n90 o-230 o-220f1 qw-r5020-593	PDF
OV 780 Contextual Info: V • » = V = CES sat ^fi(typ) Symbol Test Conditions = CES “ 9 0 0 V 2 4 A V ■ IXGH 12N90C o HiPerFAST IGBT Lightspeed™ Series CO Advanced Technical Information 7 0 n s TO-247 T, = 25°C to 150°C 900 V T J, = 25° C to 150° C;’ ROb„ = 1 Mß	OCR Scan	12n90c o-247 ov 780	PDF
Contextual Info: OIXYS HiPerFET Power MOSFETs Q Class IXFH 12N90Q VDSS IXFT 12N90Q I D25 ^ D S o n N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 900 V = = 12 A 0 .9 Q trr < 200 ns P relim inary d a ta sh e e t Symbol Test Conditions Maximum Ratings	OCR Scan	12n90q to150 o-247 o-268	PDF
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	12n90c o-247	PDF
12N90 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in	Original	12n90 o-220 o-220f1 qw-r502-593	PDF

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	12n90q	PDF
640 hc v3 Abstract: 12N90 Contextual Info: lOIXYS HiPerFET Power MOSFETs IXFH /IXFM 10N90 IXFH /IXFM 12N90 IXFH 13N90 p V DSS ^D25 900 V 900 V 900 V 10 A 12 A 13 A DS on 1.1 Q 0.9 £2 0.8 Q t„rr <250 ns High dv/dt, Low trr, HDMOS™ Family OS Symbol Test Conditions V vDGR Tj =25°Cto150°C Tj =25°Cto150°C;RGS= 1 Mi2	OCR Scan	10n90 12n90 13n90 cto150 +1640 hc v3	PDF
12n90q Abstract: PLUS247 Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q IXFX 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 Ω trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS	Original	12n90q plus-247 o-268 728b1 +3123b1 065b1 plus247	PDF
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM	Original	12n90c o-247 728b1	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in	Original	12n90 o-220 o-220f1 qw-r502-593	PDF
Contextual Info: n ix Y S MegaMOS FET IXTH/IXTM 12N90 VDSS = 900 V lD25 =12 A ^D S on ” ^ N-Channel Enhancement Mode Symbol Test Conditions V DSS T j =25°C to 150°C 900 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 900 V VQS v GSM Continuous i2 0 V Transient ±30 V	OCR Scan	12n90 o-247 o-204 c2-72 +2ixtw12n90 c2-73	PDF
Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	o-247 o-268 12n90q o-268aa	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in	Original	12n90 qw-r5020-593	PDF
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	100n10 90n20 73n30 44n50 +1448n50 36n60 67n10 75n10 42n20 50n20 mosfet 4400 mosfet 11n80 mosfet 20n60 7n80 20n60 mosfet 4800 mosfet mosfet 4800 circuit 4500 mos	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH/IXFT 13 N90 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 900 V 900 V 900 V 10 A 12 A 13 A 1.1 Ω 0.9 Ω 0.8 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	o-247 10n90 12n90 13n90	PDF

12N90 Search Results

12N90 Price and Stock

IXYS Corporation IXFH12N90P

Littelfuse Inc IXFH12N90P

ABB Group ACL-1171-2N90

IXYS Corporation IXGH12N90C

Unisonic Technologies Co Ltd 12N90G-TF1-T

12N90 Datasheets Context Search

10N90

12n90c

L1047

12n90

OV 780

12N90

640 hc v3

12n90q

mosfet 4400