110N20 Search Results

IXFK110N20

Abstract: 20n20 IXFN120N20 IXFK120N20
Contextual Info: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C

107n20n

Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
Contextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)

107n20n

Contextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

107N20NA

Abstract: 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n
Contextual Info: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on) • 175 °C operating temperature

110N20

Abstract: pf 480 d25
Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

110N20N

Abstract: 107n20n D88 z IPB107N20N3G
Contextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on)

110N20

Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol

110N20N

Contextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)

110N2

Contextual Info: ftiY V C E B W i. HiPerFET Power MOSFET IX FN IXFN IX F K IX F K Single M OSFET Die Symbol Test Conditions IXFK Tj Tj Vos VGSM Continuous Transient • w <« = 25°C to150°C = 25°C to 150°C Tc = 25°C Tc = 25«C Tc = 25°C 120N 20 110N 20 120N 20

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268

Contextual Info: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A • 175 °C operating temperature