110N20N Search Results
110N20N Price and Stock
Infineon Technologies AG IPP110N20N3GXKSA1Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3 |
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IPP110N20N3GXKSA1 | 1 |
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IPP110N20N3GXKSA1 | Bulk | 1 |
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| IPP110N20N3GXKSA1 | Tube | 28 Weeks | 500 |
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IPP110N20N3GXKSA1 | 2,636 |
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IPP110N20N3GXKSA1 | Bulk | 1 |
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IPP110N20N3GXKSA1 | 1,535 |
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IPP110N20N3GXKSA1 | 27 Weeks | 500 |
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IPP110N20N3GXKSA1 | 50,990 |
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Infineon Technologies AG IPB110N20N3LFATMA1Transistor: N-MOSFET |
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IPB110N20N3LFATMA1 | 1,000 |
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IPB110N20N3LFATMA1 | Tape & Reel | 1,000 |
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IPB110N20N3LFATMA1 | Tape & Reel | 1,000 |
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| IPB110N20N3LFATMA1 | Tape & Reel | 10 |
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| IPB110N20N3LFATMA1 | Cut Tape | 1 |
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IPB110N20N3LFATMA1 | 53 Weeks | 1,000 |
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Infineon Technologies AG IPP110N20NAAKSA1Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3 |
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IPP110N20NAAKSA1 | 1 |
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IPP110N20NAAKSA1 | Bulk | 1 |
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IPP110N20NAAKSA1 | 191 |
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IPP110N20NAAKSA1 | 23,950 | 1 |
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Infineon Technologies AG IPB110N20N3LFTransistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3 |
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IPB110N20N3LF | 1 |
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Infineon Technologies AG IPP110N20N3 GMOSFETs N-Ch 200V 88A TO220-3 OptiMOS 3 |
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IPP110N20N3 G | 45 |
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110N20N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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107n20n
Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
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ipb107n20n3ipp110n20n3ipi110n20n3iec61249-2-21+9 | |
107n20nContextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A |
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ipb107n20n3ipp110n20n3ipi110n20n3iec61249-2-21+4 | |
107N20NA
Abstract: 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n
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ipb107n20naipp110n20naiec61249-2-21pg-to263-3+6 | |
110N20N
Abstract: 107n20n D88 z IPB107N20N3G
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ipb107n20n3ipp110n20n3ipi110n20n3iec61249-2-21+6 | |
110N20NContextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on) |
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ipb107n20n3ipp110n20n3ipi110n20n3iec61249-2-21+4 | |
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Contextual Info: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A • 175 °C operating temperature |
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ipb107n20naipp110n20naiec61249-2-21pg-to263-3+3 |