110N2 Search Results

110N2 Result Highlights (5)

Part	Manufacturer	Description	Download
HM2P07PC5110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type A with 110 Signal Pins and RoHS compatable	PDF
HM2P66PD5110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type AB 22 with 110 Signal Pins and RoHS compatible	PDF
HM2P71PK5110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type B 19 with 95 Signal Pins and RoHS compatibleand RoHS compatable	PDF
HM2P95PNF110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 Row vertical Press-Fit Header, Type DE with 200 Signal Pins and RoHS compatible	PDF
HM2P88PK8110N2LF	Amphenol Communications Solutions	Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 row vertical Press-Fit Header, Type E with 200 Signal Pins and RoHS compatible	PDF

110N2 Price and Stock

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Nisshinbo Micro Devices RP110N281D-TR-FE LOW VOLTAGE, LOW SUPPLY CURRENT 150MA LDO REGULATOR - Tape and Reel (Alt: RP110N281D-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RP110N281D-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Mouser Electronics	RP110N281D-TR-FE		2,940			1 $0.51 10 $0.36 100 $0.28 1000 $0.23 10000 $0.22	Buy Now
Newark	RP110N281D-TR-FE	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now
Infineon Technologies AG IPB110N20N3LFATMA1 - Tape and Reel (Alt: IPB110N20N3LFATMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IPB110N20N3LFATMA1	Tape & Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark ()	IPB110N20N3LFATMA1	Tape & Reel			10	1 $9.35 10 $9.35 100 $5.32 1000 $5.10 10000 $4.89	Buy Now
	IPB110N20N3LFATMA1	Cut Tape			1	1 $9.35 10 $9.35 100 $5.32 1000 $5.10 10000 $4.89	Buy Now
	IPB110N20N3LFATMA1	Tape & Reel			1,000	1 - 10 - 100 - 1000 $4.39 10000 $4.04	Buy Now
TME	IPB110N20N3LFATMA1				1,000	1 - 10 - 100 - 1000 $4.05 10000 $4.05	Get Quote
EBV Elektronik	IPB110N20N3LFATMA1			53 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPP110N20N3GXKSA1 Power MOSFET, N Channel, 200 V, 88 A, 11 Milliohms, TO-220, 3 Pins, Through Hole - Bulk (Alt: 47W3478)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	IPP110N20N3GXKSA1	Bulk			1	1 $5.43 10 $3.61 100 $2.57 1000 $2.13 10000 $2.13	Buy Now
	IPP110N20N3GXKSA1	Tube		37 Weeks	500	1 - 10 - 100 - 1000 $1.68 10000 $1.56	Buy Now
Mouser Electronics	IPP110N20N3GXKSA1		2,470			1 $5.43 10 $2.83 100 $2.83 1000 $2.23 10000 $2.16	Buy Now
TME	IPP110N20N3GXKSA1				1	1 $3.25 10 $2.62 100 $2.12 1000 $1.64 10000 $1.50	Get Quote
EBV Elektronik	IPP110N20N3GXKSA1			27 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IPP110N20N3GXKSA1		50,990			1 - 10 - 100 $2.91 1000 $2.80 10000 $2.80	Buy Now
NXP Semiconductors A5G26H110N-2496 - Boxed Product (Development Kits) (Alt: A5G26H110N-2496)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	A5G26H110N-2496	Box			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Nisshinbo Micro Devices RP110N221B-TR-FE LOW VOLTAGE, LOW SUPPLY CURRENT 150MA LDO REGULATOR - Tape and Reel (Alt: RP110N221B-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RP110N221B-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Mouser Electronics	RP110N221B-TR-FE					1 $0.51 10 $0.36 100 $0.28 1000 $0.23 10000 $0.22	Get Quote

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110N2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFK110N20 Abstract: 20n20 IXFN120N20 IXFK120N20 Contextual Info: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C	OCR Scan	ixfn120n20 ixfn110n20 ixfk120n20 ixfk110n20 +2o-264 20n20	PDF
t110n2 Abstract: 110N2 t-110n2 339 D-PAK NTD110N02RT4 Contextual Info: NTD110N02R Power MOSFET 110 A, 24 V, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02rg ntd110n02r-001 ntd110n02r-001g +7ntd110n02rt4 ntd110n02rt4g brd8011/d t110n2 110n2 t-110n2 339 d-pak	PDF
107n20n Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3 Contextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)	Original	ipb107n20n3 ipp110n20n3 ipi110n20n3 iec61249-2-21 +9pg-to263-3 pg-to220-3 pg-to262-3 107n20n 110n20n ipp110n20n3 g dsv80 d88 z ipi110n20n3 g	PDF
t110n2 Abstract: 369AA-01 110N2 Contextual Info: NTD110N02R Power MOSFET 110 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02r/d t110n2 369aa-01 +1110n2	PDF
107n20n Contextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A	Original	ipb107n20n3 ipp110n20n3 ipi110n20n3 iec61249-2-21 +4pg-to263-3 pg-to220-3 pg-to262-3 107n20n	PDF
110n2g Abstract: STD110N02R Contextual Info: NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r std110n02r ntd110n02r/d 110n2g	PDF
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Contextual Info: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	o-247 t0-204 o-264 76n06-11 +1475n06-12 110n06 76n07-11 76n07-12 ixys ixfn 55n50 170n10 c1106 ixfh26n50 c1124 ixfn170n10 c1120 15n100 76n06 ixfn36n60	PDF
110n2g Abstract: T110N2G t110n2 T110n t-110n2 110N2 Contextual Info: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02r/d 110n2g t110n2g +4t110n2 t110n t-110n2 110n2	PDF
107N20NA Abstract: 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n Contextual Info: IPB107N20NA OptiMOSTM3 Power-Transistor 110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID 88 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb107n20na ipp110n20na iec61249-2-21 pg-to263-3 +6107n20na pg-to220-3 110n20na 110n20n p-1031 107n20n	PDF
110n2g Abstract: t110n2 110N2 T110N2G 369D NTD110N02R NTD110N02RG NTD110N02RT4G Contextual Info: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02r/d 110n2g t110n2 +5110n2 t110n2g 369d ntd110n02rg ntd110n02rt4g	PDF
110N20 Abstract: pf 480 d25 Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)	OCR Scan	200ns o-264 110n20 120n20 +2cto150 pf 480 d25	PDF
110n2g Abstract: T110N2G t110n2 110N2 T110n t-110n2 369D NTD110N02R NTD110N02RG NTD110N02RT4 Contextual Info: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02r/d 110n2g t110n2g +7t110n2 110n2 t110n t-110n2 369d ntd110n02rg ntd110n02rt4	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	o-247 plus247 isoplus247tm o-268 +16o-264 80n06-11 76n07-11 76n07-12 100n10 170n10 sd 20n60 ixfx 44n80 20n80 60n60 9n80 c2625 power mosfet 100n20 ixfh32n50 230n10 8n80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	axc-051 axc-053 axc-101 axc-102 +16axl-001 axl-051 axv-102 142-12io8 142-16io8 19-08ho1 7n60b 35n120u1 ixys dsei 45-12a dsdi 35-12a 20n80 80n06 80n60 vvy 40-16io1 ixys cs 2-12 ixfx 44n80	PDF

110N2 Abstract: 369D T110N2 NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G 25C80 dpak DIODE Contextual Info: NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02r/d 110n2 369d +6t110n2 ntd110n02rg ntd110n02rt4 ntd110n02rt4g 25c80 dpak diode	PDF
110N20 Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429 Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol	OCR Scan	120n20 200ns 110n20 ixfk110n20 +2mosfet p 110a diode lt 429	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
110N20N Contextual Info: IPB107N20N3 G 110N20N3 G 110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)	Original	ipb107n20n3 ipp110n20n3 ipi110n20n3 iec61249-2-21 +4pg-to263-3 pg-to220-3 pg-to262-3 110n20n	PDF
110N2 Contextual Info: ftiY V C E B W i. HiPerFET Power MOSFET IX FN IXFN IX F K IX F K Single M OSFET Die Symbol Test Conditions IXFK Tj Tj Vos VGSM Continuous Transient • w <« = 25°C to150°C = 25°C to 150°C Tc = 25°C Tc = 25«C Tc = 25°C 120N 20 110N 20 120N 20	OCR Scan	o-264 to150 ot-227 110n2	PDF
t110n2 Abstract: 110N2 NTD110N02R 369D NTD110N02RG NTD110N02RT4 NTD110N02RT4G Contextual Info: NTD110N02R Power MOSFET 110 A, 24 V, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02r/d t110n2 110n2 +4369d ntd110n02rg ntd110n02rt4 ntd110n02rt4g	PDF
110n2g Abstract: STD110N02RT4G STD110N02R 110N2 T110N2G Contextual Info: NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r std110n02r ntd110n02r/d 110n2g +3std110n02rt4g 110n2 t110n2g	PDF
369D Abstract: NTD110N02R NTD110N02R-1 NTD110N02RT4 110N2 110N02 Contextual Info: NTD110N02R Power MOSFET 110 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	ntd110n02r ntd110n02r/d 369d ntd110n02r-1 +3ntd110n02rt4 110n2 110n02	PDF
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	76n06-11 76n07-11 76n07-12 67n10 +1675n10 50n20 58n20 74n20 80n20 35n30 52n30 20n80 ixfh 60n60 ixfx 44n80 15n10 7n80 e51g 44n80 60n60 46n50	PDF
C1218 Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268	OCR Scan	67n10 75n10 75n10q 80n10q +16o-247 plus247 isoplus247tm o-268 o-264 80n06-11 c1218 c1222 ixfh 60n60 ixfx 44n80 c1138 c1238 20n80 c1228 c1172 ixfn 230n10 230n10	PDF

110N2 Search Results

110N2 Result Highlights (5)

110N2 Price and Stock

Nisshinbo Micro Devices RP110N281D-TR-FE

Infineon Technologies AG IPB110N20N3LFATMA1

Infineon Technologies AG IPP110N20N3GXKSA1

NXP Semiconductors A5G26H110N-2496

Nisshinbo Micro Devices RP110N221B-TR-FE

110N2 Datasheets Context Search

IXFK110N20

t110n2

107n20n

t110n2

107n20n

110n2g

ixys ixfn 55n50

110n2g

107N20NA

110n2g

110N20

110n2g

sd 20n60

7n60b

110N2

110N20

7N60B equivalent

110N20N

110N2

t110n2

110n2g

369D

52N30

C1218