120N20 Search Results
120N20 Price and Stock
Littelfuse Inc IXFK120N20P |
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IXFK120N20P | 25 |
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IXFK120N20P | Bulk | 300 |
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IXFK120N20P | Bulk | 8 Weeks | 25 |
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Torex Semiconductor LTD XC6120N202SR-GVoltage Supervisor, 2V, 0.7 V to 6 V, Open-Drain, SOT-25, 5 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6120N202SR-G) |
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XC6120N202SR-G | Tape & Reel | 16 Weeks | 3,000 |
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ROHM Semiconductor RCX120N20Mosfet, N-Ch, 200V, 12A, To-220Fm-3; |Rohm RCX120N20 |
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RCX120N20 | Bulk | 1 |
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RCX120N20 | 985 | 1 |
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IXYS Corporation IXTQ120N20PMosfet, N-Ch, 200V, 120A, To-3P; |Ixys Semiconductor IXTQ120N20P |
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IXTQ120N20P | Bulk | 1 |
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IXTQ120N20P | Tube | 300 |
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IXTQ120N20P | 1 | 1 |
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IXYS Corporation IXFH120N20PMosfet, N, To-247; |Ixys Semiconductor IXFH120N20P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFH120N20P | Bulk | 1 |
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IXFH120N20P | Tube | 300 |
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IXFH120N20P | 1 |
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120N20 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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120N20Contextual Info: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS |
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120n20 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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120n20id104247tmo-264+2 | |
120N20Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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120n20id104247tmo-264+2 | |
e15343Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTR 120N20P VDSS = 200 V ID25 = 85 A Ω RDS on ≤ 25 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 |
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120n20pe15343 | |
ID104
Abstract: IXFX
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120n20id104247tmixfx | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 RDS on = (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW |
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120n20isoplus247tm247tm | |
120N20
Abstract: motor IG 2200 19 125OC ID104
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120n20id104247tm125oc+2 | |
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Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ |
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120n20po-264 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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120n20id104247tm125oc+1 | |
NS152Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXFN 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 220 ns trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ |
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120n20pns152 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200 |
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120n20id104247tmo-264 | |
120n20
Abstract: ID104
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120n20id104247tm728b1+2 | |
120N20
Abstract: DS965
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120n20ot-227e153432728b1+1 | |
120N20PContextual Info: PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ |
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120n20po-247 | |
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Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFR 120N20 ISOPLUS247™ Electrically Isolated Back Surface Symbol Test Conditions v T j = 25° C to 150° C ^ = 25°Cto150°C ;R GS=1 Mi2 200 200 V V Continuous T ranslent ±20 £30 V V Tc = 25° C (MOSFET chip capability) |
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120n20isoplus247tmcto150247tm | |
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Contextual Info: IXFN 120N20 HiPerFET TM Power MOSFETs VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol |
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120n20ot-227e153432 | |
120N20Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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120n20id104247tmo-264+2 | |
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Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
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120n20p | |
IXFH120N20PContextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 140 ns trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings |
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120n20pixfh120n20p | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol |
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120n20ot-227e153432 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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120n20isoplus247tm728b1 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol |
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120n20ot-227 | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS |
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120n20isoplus247tm728b1 | |
120N20P
Abstract: IXTQ120N20P 120N20
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120n20po-264ixtq120n20p120n20 | |