2N102 Search Results

Contextual Info: 2N102 Transistors Ge NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)70’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1025

Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
Contextual Info: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.

Contextual Info: 2N1021 Ge PNP Power BJT 3.00 Transistors Transistors Bipolar Ge PNP Power Bipolar . Page 1 of 1 Enter Your Part # Home Part Number: 2N1021 Online Store 2N1021 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N1022 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)700u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0

Contextual Info: 2N1022A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0

Contextual Info: 2N1026A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).02u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1026A

Contextual Info: 2N1026A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1026A Availability Online Store

Contextual Info: 2N1027 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1026+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1025

Contextual Info: 2N1025 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1026 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1024 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1023 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.

2N458B

Abstract: 2N1022A 2N4588 transistor ba 752 2N1021A 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power
Contextual Info: TYPES 2N456B, 2N457B, 2N458B, 2N1021A AND 2N1022A P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS Military and Industrial Applications mechanical data The use of silver a llo y to assem ble the mounting b ase a n d the use of resistance w elding to seal the can ,

Contextual Info: 2N1025+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: rm s A C 'J U — * « « * & D 2N102LD D 2N 102LE D 2N202LD D 2N 202LE -è O R ^ N 'r t i f t M ft UL CSA 5$ nqTUV s e # \ ft b°-? 1 1#M ) aj Viso (tì*-A *ra) ft ft & D2N202LD - - 240 Vrms Vpeak 2.0 Arms Ism 20 Apeak 14 R in 180 750 Hz 6 14 V dc

N511A

Abstract: 2N458 2N5156 2N1160 2N4243 2N1021A 2N458A Germanium power 2N1147
Contextual Info: germanium power transistors 149 See Pg. 147 for outline dra!Ni~g_ ~ ._ .~~ . _ . I • PNP ALLOY TRANSISTORS S.O Amp I BREAKDOWN VOLTAGES I I I I TYPE NUMBER VCB 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N1021 2N1021A 2N1022 2N1022A

2N3614

Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022

2n456a

Abstract: 2N457A 2N458A 2N1022 2N1021 GERMANIUM PNP LOW POWER TRANSISTORS Texas Germanium Germanium power Germanium Power Transistors
Contextual Info: TYPES 2N456A, 2N457A, 2N458A, 2N1021 2N1022 P-N-P ALLOY -JUNGION GERMANIUM POWER TRANSISTORS 310 j m C CHOICE OF 40v, 60v, 80v, 100v, or 120v DEVICES < < r r m *o - « m w 2 H ro 0 = Z Crt z £ LOW Ico HIGH BETA LOW Res LOW THERMAL RESISTANCE mz £ ? p

2N458B

Abstract: 2N1021 2N1021A 2N456B 2n457a 217B 2N1022A 2N456A MIL-S-19500 FOR POWER LINE TRANSISTOR 2N457B
Contextual Info: M IL -S-19500,'217B 17 January 1972 SUPERSEDING M IL -S -19500 217A 29 S ep tem b er 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTORS, PN P , GERMANIUM, HIGH-POW ER T Y PE S 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A T h is sp e c ific a tio n is m a n d ato ry fo r u se by a ll D e p a rt­

2N1021

Abstract: 2N1021A 2N1022 2N1022A
Contextual Info: ., <Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA germanium power transistors PNP TO-3 (cont'd) Type* 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N629 2N1549&#39; 2N1550&#39;

2SA987

Abstract: 2N1026A LOW-POWER SILICON PNP
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 NB321F NB321X NB321Y 2N2105 2N2105 2N2105 2N1026A 2N1469 2N940 V410A 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 NB221EH NB221FH NB221XH NB221YH NB021ET NB021FT NB023ET NB023FT 2SA987 NB021FI

Contextual Info: 2N1022A+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY