germanium transistors NPN
Abstract: CASE TYPE TO13 2N1326 npn germanium 2n539 2N1329 2N539A 2N538A 2N538 Germanium power
Contextual Info: germanium power transistors /*Sl » PNP TO-13 lc M A X = 3A VcEO(SUS) = 30 to 100V Iif e Type# NPN Comple ment VCEO(SUS) (Volts) (Volts) @ Ic/VcE (Min-Max @ A/V) 2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 60(Vces) 30(Vces) 80(Vces) IOO(Vces)
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2n10782n13282n13312n1333+142n13302n13292n13322n13342n1321germanium transistors npncase type to132n1326npn germanium2n5392n539a2n538a2n538germanium power
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2N158A
Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670
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2n2668mt-272n26692n2670+122n1042mt-282n10432n158agermanium npn2n17612n12182n2067germanium transistors npnto13mt282n1044
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152
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2N3215
Abstract: MT28 TO13 2n3214 Germanium power
Contextual Info: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r
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3tm73752n26682n26692n2670+112n10422n10432n10442n10452n25562n25572n3215mt28to132n3214germanium power
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AC187
Abstract: 2N4105 ac187-01 TO13 2N1218 2S0352
Contextual Info: POWER GERMANIUM NPN Item Number Part Number Manufacturer Ic Max V BR CEO (A) (V) hFE Min Max fT ICBO Max (Hz) (A) t, Max (I) t, Max PD Max (8) (W) Toper Max (OC) Package Style Devices 1 Watt or More 5 2S0367 2S0170 2N144 2S0352 2S0352 2N4105 AC187 AC187/01
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2s03672s01702n1442s0352+82n4105ac187ac187/01ac175a0165ac187-01to132n1218
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germanium transistors NPN
Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Contextual Info: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A
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2n2668mt-272n26692n2670+112n1042mt-282n1043germanium transistors npnto13mt28germanium power2n10442n10452n25562n2557
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2067
Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
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2n26682n26692n26702n1042+122n1043mt-27mt-282n20672n32142n158germanium transistors npn2n3215to13mt282n17592n158a
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SN72710L
Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4
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lh0002clh0002cnnh0005cdac08cz+16nh0014cdh003478m12hcmmh0026cg79m12ahc75460bpsn72710lmc1013pmc680p796hcmc1235lmc838pmc814gmc1670l723hc741hm
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2n3215
Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
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2n26682n26692n26702n1042+112n1043mt-27mt-282n3215to13mt28diode e 20602n22842n10442n10452n2556
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2N3214
Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Contextual Info: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883
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afl4fl352ddd0111tmi\i515t0rtc-25+152n26682n26692n26702n10422n1043mt-272n3214to372n22832n2282to13diode e 2060mt282n17552n1044
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2N206
Abstract: 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067 2N1042 2N1043
Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c / Y ce Type Number Case Type J'c E O d w l Y ebo V y AíV K « Min-Max ® A /V @/c//fl (V® A/A) @ V CE (V@A/V) (mA@V) P d@ Tc =25°C &JC (watts) r e /W ) r e ) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669
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2n2668mt-272n26692n2670+112n1042mt-282n10432n2062n25562n2282to13germanium transistors npnmt282n102n2067
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2n34a2n43a2n44a2n59a+162n59b2n59c2n60a2n60b2n60c2n61an17022n2772sa632n390al204a2n408tfk 940oc592n3742n1922
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6mc707g2n328ln4005 diode reverse current and voltagemc708gc844pts36a
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