2N1326 Search Results

Contextual Info: 2N1326 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)85õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)1.0

MP2145

Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

npn 10 a 50 v to-3 germanium

Abstract: TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number «C Part Number Manufacturer Type Max V BR CEO (A) (V) Po Max h re fT ICBO Max k)N Max ON) Min (HZ) (A) (s) r (CE)ut T Oper Max (Ohms) Max (°C) 250m 250m 230m 160m 470m 500m 250m 250m 250m 750m 10 10 10 750m 10 10 10

germanium transistors NPN

Abstract: CASE TYPE TO13 2N1326 npn germanium 2n539 2N1329 2N539A 2N538A 2N538 Germanium power
Contextual Info: germanium power transistors /*Sl » PNP TO-13 lc M A X = 3A VcEO(SUS) = 30 to 100V Iif e Type# NPN Comple­ ment VCEO(SUS) (Volts) (Volts) @ Ic/VcE (Min-Max @ A/V) 2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 60(Vces) 30(Vces) 80(Vces) IOO(Vces)

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N1375

Abstract: 2n1310 2N1389 2N1410 2N1416 2SC1940 Motorola 2N1363 sot-23 TAW texas 2N1307 2N1377
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES