2N1430 Search Results

AU103

Abstract: 3N48 2N5325 AU111 2N6064 germanium au108 2N2069 2n174 TO36 package
Contextual Info: POWER GERMANIUM PNP Item Number Part Number 10 >= 20 25 30 2Nl073A 2N2289 2N2526 2N6064 2N6064 AD142 AD142 AD142 SDG603 2N2444 2S8468 2S8468 2N1430 AU108 AU108 AU108 2Nl0738 2N2290 2N2527 ~~~g~ 35 40 2N2212 AL100 AL100 All 00 AU210 2N5324 AU103 AU103 ~~~~g

2N1412A

Abstract: 2n5156 2N1100 2N1073B 2N1412 Germanium Power Devices 2n1146 2N2291 2N2288 2N27S
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type VcBO V 2N629 2N630 2N1073 2N1073A 2N1073B TO-3 TO-3 TO-3 TO-3 TO-3 80 100 40 80 120 2N1430 2N2212 2N2288 2N2289 2N2290 TO-41* TO-41* TO-3 TO-3 TO-3 120 120 40 80 120 2N2291 2N2292 2N2293 2N2294 2N2295 TO-3

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N1480

Abstract: MARKING 333 transistor C200 2N1479 2N1481 2N1482 SMA-KE 434 MARKING
Contextual Info: à ilII _ C _ 1 Û C r t A /'»ftl/'/PI \ m iu - j- i 7JUU/ zu/V-^ELj 9 December 1 9 6 6 bUFfcKbtülNÜ AA II -.ç_io*;nn/on • « '« w v / ¿w7vo/Ei iu k ;\ 13 OrfntiAr 1 9 AA MILITARY SPECIFICATIO N TRANSISTOR, N PN , SILIC O N TYPES 2N1479, 2N 1480,2N 1481,2N 1482

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type VcBO V y CEO V yf.BO y Vcek V y ces V Min. CURRENT G AIN hfE ^C1 @ /c Max. V A SA TU R A TIO N VOLTAGES y CEIt ^ÄF l) Ic @ is V V A A 6j.c °C /W 10 AMP GERMANIUM PNP (Cont.) 2N629 2N630 2N1073 2N1073A 2N1073B

2N3614

Abstract: 2N3612 2N4588 2N2869 2N3613 2N3618 DA3f3 2n174 2N3611 PNP Germanium 2N2291
Contextual Info: 53 GERMANIUM POWER TRANSISTORS CURREIV IT G A IN T Y PE N U M BER C A SE T YPE V CBO V V CEO V 7 AM F» G E R M A N U JM V EBO V PN 3 2N457A TO-3 2N457B TO-3 2N458 TO-3 60 60 80 30 2N458A TO-3 2N458B TO-3 2N637 TO-3 80 80 60 40 2N637A TO-3 2N637B TO-3 2N638

2N1375

Abstract: 2n1310 2N1389 2N1410 2N1416 2SC1940 Motorola 2N1363 sot-23 TAW texas 2N1307 2N1377
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment