2N6353 Search Results

2N6353

Abstract: 2n6351 RB1-E
Contextual Info: SÖE D TELED YN E COMPONENTS ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS 2N6350 thru 2N6353 GEOMETRY 508 • KD5A • LowVCE Sat • High Gain TO-33 • Monolithic Construction MAXIMUM RATINGS SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT

Contextual Info: 2N6353 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k

Contextual Info: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA

2N6350

Contextual Info: JAN, JAN, JAN, JAN, POWER DARLINGTONS 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX & & & & JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 DESCRIPTION U n itro d e N P N D a riin g ton s co n sist of a two tra n sisto r c ir c u it on a sin gle m o n o lith ic plan ar ch ip. The 2N6350

Contextual Info: 2N6353+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k

Contextual Info: 2N6353+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k

2N6353

Abstract: rb1-e 2N6352
Contextual Info: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level 2N6350 JAN JANTX JANTXV 2N6351 2N6352 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage

2N6350

Abstract: 2N6351 2N6353 2N6352 JANTX 2N6351 2N635 JANTX 2N6352 r6e2 JANTX 2n ze 003 ic
Contextual Info: JAN JAN JAN JAN POWER DARLINGTONS 5 Amp, 150V, NPN & JANTX & JANTX & JANTX & JANTX 2N6350 2N6351 2N6352 2N6353 D E S C R IP T IO N FEATURES • H igh Current Gain: up to 2000 min. @ lc = 5A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • Peak Current: to 10A

2N6127

Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
Contextual Info: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

Contextual Info: 2N6353+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k

TO61 package

Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

Contextual Info: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. Important: For the latest information, visit our website http://www.microsemi.com.

2N6350

Abstract: 1000C 2N6351 2N6352 2N6353 JANTX 2N6351
Contextual Info: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level 2N6350 2N6351 2N6352 JAN JANTX JANTXV 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: MICROSEMI CORP/ WATERTOlilN WT'iba 00124^ 5DE D POWER DARLINGTONS JAN, JAN, JAN, JAN, 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX 07b & JANTXV & JANTXV & JANTXV & JANTXV IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION • • • • Unitrode NPN Darltngtons consist of a

2N6350

Contextual Info: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 NPN POWER DARLINGTON 2N6350 thru 2N6353 5 AMP SWITCHING TRANSISTORS • • • • GEOMETRY 508 IC5A Low VCE Sat High Gain Monolithic Construction TO-33 MAXIMUM RATINGS cou£crou/c*a SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT

2N6352

Abstract: 2N6350 2N6353 2N6351 1000C JAN 2N6351
Contextual Info: TECHNICAL DATA 2N6350 JAN, JTX, JTXV 2N6351 JAN, JTX, JTXV 2N6352 JAN, JTX, JTXV 2N6353 JAN, JTX, JTXV Processed per MIL-PRF-19500/472 NPN DARLINGTON SILICON POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N6350 2N6352 2N6351 2N6353 Units VCER VCBO VEBO 80

Jantxv2N5666S

Contextual Info: Microsemi NPN Transistors Part Number 2N1485 2N1486 2N4910 2N4911 2N4912 2N5606 2N5610 2N6352 2N5612 2N6353 2N3018 2N4300 2N5662 JAN2N5662 JANTX2N5662 JANTXV2N5662 , 2N5663 JAN2N5663 JANTX2N5663 JANTXV2N5663 2N5666 2N5666S JAN2N5666 JAN2N5666S JANS2NS666 JANS2NS666S

Contextual Info: COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued D e v ice No C ase 2N6262 2N 6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 SECTION 2 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO V o lts V C EO su s

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

472 M

Abstract: MIL-S-19500 2N3055 JANTX
Contextual Info: Summary List of API Q.P.L. Directory Types 2N2812 - JAN, JAN-TX, JAN-TXV 2N2814 - JAN, JAN-TX, JAN-TXV M IL-S-19500/415 MIL-S-19500/415 2N2880 - JAN. JAN-TX, JAN-TXV 2N3749 - JAN. JAN-TX, JAN-TXV M IL-S-19500/315 MIL-S-19500/315 2N3055 - JAN. JAN-TX, JAN-TXV

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

Contextual Info: o H DA RLIN GTON O flffcil « M t l t t O T O N M W PACKAGE ec TO-33 < û F-24 TO-21 3/TO-66 TO-204/TO-3 PACKAGE TO-21 3/TO-66 k V O LT S 2N635Q" 2M6351“ *C @ *6 A A 1.0/5.0 1.5 5.0/0.005 1000 1.0/5.0 1.5 5.0/0.01 *C @ V C E A V ^ C E s a t m ax V O LT S