Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N5611 Search Results

    2N5611 Datasheets (13)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N5611
    Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=100 / Ic=5 / Hfe=30-90 / fT(Hz)=60M / Pwr(W)=25 Original PDF 11.57KB 1
    2N5611
    API Electronics 5 Amps PNP Transistors Scan PDF 235.22KB 2
    2N5611
    API Electronics 5 AMPS PNP Transistors Scan PDF 235.21KB 2
    2N5611
    API Electronics Short form transistor data Short Form PDF 65.16KB 1
    2N5611
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.47KB 1
    2N5611
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 84.78KB 1
    2N5611
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 109.76KB 1
    2N5611
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 104.59KB 1
    2N5611
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.57KB 1
    2N5611
    PPC Products Transistor Short Form Data Scan PDF 264.94KB 1
    2N5611
    Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF 114.42KB 2
    2N5611
    Solitron Devices Planar Power Transistor Scan PDF 678.74KB 11
    2N5611A
    Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=100 / Ic=5 / Hfe=30-150 / fT(Hz)=60M / Pwr(W)=25 Original PDF 11.56KB 1
    SF Impression Pixel

    2N5611 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc 2N5611

    Transistor BJT PNP 100V 5A TO-66 - Bulk (Alt: 2N5611)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5611 Bulk 50 Weeks 100
    • 1 -
    • 10 -
    • 100 $39.85
    • 1000 $36.78
    • 10000 $36.32
    Buy Now
    Mouser Electronics 2N5611
    • 1 -
    • 10 -
    • 100 $44.18
    • 1000 $44.18
    • 10000 $44.18
    Get Quote
    Newark 2N5611 Bulk 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $40.16
    • 10000 $40.16
    Buy Now
    Microchip Technology Inc 2N5611 50 Weeks
    • 1 $40.16
    • 10 $40.16
    • 100 $40.16
    • 1000 $40.16
    • 10000 $40.16
    Buy Now
    Onlinecomponents.com 2N5611
    • 1 -
    • 10 -
    • 100 $35.61
    • 1000 $35.61
    • 10000 $35.61
    Buy Now
    Master Electronics 2N5611
    • 1 -
    • 10 -
    • 100 $35.61
    • 1000 $35.61
    • 10000 $35.61
    Buy Now

    2N5611 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5609

    Abstract: DATASHEET 5609 2*5609 2N5607 2N5609 2N5605 5609 c 2N5611
    Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original
    2n56052n56072n56092n5611+52n5607/56095609datasheet 56092*56095609 c PDF

    2N5611A

    Contextual Info: 2N5611A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    2n5611ao213aa1-aug-02 PDF

    Contextual Info: ^zmL-Conductoi {Pioducti, fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5611 DESCRIPTION • DC Current Gain: hFE= 30-90@lc= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage: VCEO(SUS)=-100V(Min)


    Original
    2n5611-100v2n5612n5611+2-50ma-120v PDF

    2N5611A

    Contextual Info: SavantIC Semiconductor Product Specification 2N5611A Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original
    2n5611a-50ma PDF

    Contextual Info: 2N5611 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    2n5611o213aa30-jul-02 PDF

    TO-66 CASE

    Abstract: 2N5611A
    Contextual Info: Inchange Semiconductor Product Specification 2N5611A Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original
    2n5611a-50mato-66 case PDF

    5609

    Abstract: DATASHEET 5609 2N5605 2*5609 2N5607 2N5609 2N5611
    Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original
    2n56052n56072n56092n5611+42n5607/56095609datasheet 56092*5609 PDF

    2N5611

    Abstract: 2N5612 100v audio amplifier
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5611 DESCRIPTION •DC Current Gain: hFE= 30-90@IC= -2.5A ·Wide Area of Safe Operation ·Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·Complement to Type 2N5612


    Original
    2n5611-100v2n5612-50ma+2-120v100v audio amplifier PDF

    5609

    Abstract: DATASHEET 5609 2N5609 5609 c 2N5607 S 5609 2N5605 2N5611 ic 5611
    Contextual Info: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original
    2n56052n56072n56092n5611+62n5607/56095609datasheet 56095609 cs 5609ic 5611 PDF

    2N5286 DATASHEET

    Abstract: 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385
    Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5605 2N5607 2N5609 2N5611 2N5613 2N5615 2N5617 2N5619 2N6190 2N6192 SDT3301 SDT3302 SDT3303 SDT3304


    Original
    2n50032n50052n51512n5153+82n52862n52872n53842n53852n54042n54052n5286 datasheetsdt3775 PDF

    2N5611

    Contextual Info: 2N5611 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    2n5611o213aa1-aug-02 PDF

    N6211

    Abstract: 23911 jan2N6211
    Contextual Info: Micmsemi PNP Transistors . P art N um ber ' | M icrosem i l D ivision fr PPC, , PPC, 2N5605 2N5607 PPC, PPC, 2N5608 PPC, 2N5609 PPC, 2N5611 PPC, TIP30 PPC, TIP30A PPC, TIP30B PPC, TIP30C PPC, 2N4999 PPC, 2N5001 PPC, 2N6420 PPC, 2 N 6211 PPC,


    OCR Scan
    jantxv2n3741t0-220t0-22co-220+3n621123911jan2n6211 PDF

    Contextual Info: 2N5611A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    2n5611ao213aa30-jul-02 PDF

    LC51

    Contextual Info: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629


    OCR Scan
    a13312n56022n56032n5604+72n56052n56062n56072n56082n56092n5610lc51 PDF

    2N5286

    Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
    Contextual Info: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204


    OCR Scan
    2n31712n31722n31732n3174+102n31752n31762n31772n317s2n31832n31842n52862n31962n5601to111 package PDF

    JAN2N3996

    Abstract: 2N4307 ISM22 2n3183
    Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100


    OCR Scan
    jan2n39962n4307ism222n3183 PDF

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original
    ad818ad818diead820ad821+12ad820dieo-204aa/to-3bd119bc148aapt1002rbnr1000 volt npnbd109apt5025anapt904r2bnbd107apt1001r3anapt1004rbnr PDF

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


    OCR Scan
    fls5402a2n5348o-1112n5349+82n53842n53852nxxxx2n54802n56722n5675to114 package2n5388 PDF

    2SB5950

    Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
    Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect


    Original
    2n54109ft369ux78bux78+122sa1069al2n61912sb8692sb9332sb9452sb5950b0540cto-532sb595-0b0242c2n31862n3198 PDF

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


    OCR Scan
    mt-13ksd 166lt 7202 diodekertron+7la 4301transistor ksp 13 801kda 1.22n5085lt 7207ksp 13 8010/transistor ksp 13 801 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan
    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29 PDF

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


    OCR Scan
    2n12522n12532n15062n1506a+162n17142n17152n17162n17172ni7182n17194116 2nj 58042n3920tr j 58044116-2n2n36192n375n53392n28912n3442 PDF

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


    OCR Scan
    2n23872n29882n2s892n2990+162n29912n29922n29932n29942n34392n34402ns6042ns5402ns154sd716sdt133052n56712n5005sdt425sdt7605sdt96302 PDF