BUX77 Search Results

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428

BUX77A

Abstract: BUX77A-220M BUX78A BUX78A-220M LE17 5339
Contextual Info: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS

Bux81

Abstract: BUY12 NPN/8D140 NPN/SML1258
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BUX60 BUX61 BUX62 BUX63 BUX64 BUX65 BUX66 BUX67 BUX67A BUX67C BUX69 BUX70 BUX77 BUX77 CECC BUX77-SM BUX77A BUX77A-220M BUX78 BUX78 CECC BUX78-SM BUX78A BUX78A-220M BUX78A-SM BUX78-SM BUX80 BUX81

to66

Abstract: TO66 package BUX77
Contextual Info: BUX77 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

BUX77

Abstract: st marking code BUX77HR
Contextual Info: BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

BUX77ASMD

Contextual Info: BUX77ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

tcase

Contextual Info: BUX77A BUX78A Bipolar NPN / PNP Devices in a Hermetically Sealed TO66 Metal Package MECHANICAL DATA Dimensions in mm • Hermetic Metal Package 3.61 0.142 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 • Screening Options Available 0.71 (0.028) 0.86 (0.034)

BUX77A

Abstract: BUX78A LE17 7743
Contextual Info: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

BUX77

Abstract: LE17
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

NPN Transistor TO220 VCEO 80V 100V

Abstract: Silicon PNP Epitaxial Planar Transistor to220 NPN Transistor VCEO 80V 100V BUX77A BUX78A
Contextual Info: BUX77A–220M BUX78A–220M MECHANICAL DATA Dimensions in mm 10.6 0.42 4.6 (0.18) 3.70 Dia. Nom FEATURES 10.6 (0.42) 1.5(0.53) 16.5 (0.65) 0.8 (0.03) NPN AND PNP SILICON PLANAR EPITAXIAL TRANSISTORS • Hermetic TO220 Isolated Metal Package • Screening Options Available

NPN Transistor VCEO 80V 100V

Abstract: BUX77
Contextual Info: BUX77 MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97)

BUX77A

Contextual Info: BUX77A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M • High Power • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS

Contextual Info: SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4

BUX77SMD

Contextual Info: BUX77SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

2n5430

Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
Contextual Info: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V

Contextual Info: BUX77X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

NPN Transistor VCEO 80V 100V

Abstract: BUX77X
Contextual Info: BUX77X MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95)

Contextual Info: BUX77 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

tcase

Contextual Info: BUX77A–220M BUX78A–220M MECHANICAL DATA Dimensions in mm NPN AND PNP SILICON PLANAR EPITAXIAL TRANSISTORS 10.6 0.42 4.6 (0.18) 3.70 Dia. Nom FEATURES 10.6 (0.42) 1.5(0.53) 16.5 (0.65) 0.8 (0.03) • Hermetic TO220 Isolated Metal Package • Screening Options Available

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein: