2N558 Search Results

2N558

Abstract: 2N5581
Contextual Info: 2N5581 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)

2N2222A 331

Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800

2N5583

Contextual Info: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC 500 mA VCE -30 V PDISS 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C

2n5583

Contextual Info: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N5581+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 423 Devices Qualified Level 2N5581 JAN JANTX JANTXV 2N5582 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Contextual Info: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 500 mA VCE -30 V PDISS 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C TJ

Contextual Info: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2N5583

Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5583 Silicon Epitaxial-Planar Bipolar MW NPN transistor Package Type: TO-39 ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL Rating Collector-Emitter Voltage REB=10Q VcER Collector-Base Voltage VcBO Emitter-Base Voltage ^EBO

2N5581

Abstract: 2N5582
Contextual Info: TECHNICAL DATA 2N5581 JAN, JTX, JTXV 2N5582 JAN, JTX, JTXV MIL-PRF QPL Processed per MIL-PRF-19500/423 DEVICES NPN SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO

2N5590

Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
Contextual Info: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY

Contextual Info: zSztni-Conduakoi Lpi , Jna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Dimensions in mm (inches).

2N5583

Contextual Info: 2N5583 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • High Voltage Switching • High Frequency Amplifier Applications 0.89 max. (0.035)

HA20

Abstract: MXR5583
Contextual Info: M O T O R O L A SC ÍXSTRS/R F} 6 3 6 7 2 5 4 MOTOROLA SC "ñT X S T R S / R F DE Jb3L.72S4 00714^0 7 89D 79460 V ' F ' Z ! — 2 -2 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MXR5583 Die Source Sam e as 2N5583 HIGH FREQUENCY RF TRANSISTOR PNP SILICON M AXIM UM RATINGS

2N5581

Contextual Info: 2N5581 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)

2N5581

Abstract: 2N5581 JAN 2N5581J 2N5581JV 2N5581JX
Contextual Info: 2N5581 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)

2N5330

Abstract: 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 SDT6338 SDT6339 SDT6340 SDT6341 SDT8151 SDT8152 SDT8153 SDT8154 SDT8155 SDT8156 SDT8157 SDT8158 SDT8159 SDT8301 SDT8302 SDT8303 SDT8304 SDT44301

VCEO

Abstract: IC data book free download hFE is transistor TO114 2n5588 80 diode ic and equivalent ic type My 350 transistor sit
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N5587 2N5588 120 160 10/30 10/30 80 80 VCE (sat) @ IC (A) Max (V) 2.0 2.0 80 80 fT MIN (MHz) 0.5 0.5 PT MAX (W) 350 350 Case Type Chip Type TO-114 TO-114 196 196

2n5583

Abstract: lm3909
Contextual Info: 2N5583 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors — Product Line 1 of 1 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ|

2N5583

Abstract: TO39 package
Contextual Info: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2N5583

Abstract: 72s4 MXR5583 25CC
Contextual Info: MOTOROLA SC íXSTRS/R F> ñT 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F DE |b3ti7254 007^4^0 7 V'p-Zl — Z 3 89D 7 9 4 6 0 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5583 Die S ource Sam e as 2N5583 HIGH FREQUENCY RF TRANSISTOR P N P S IL I C O N M A X IM U M R A T IN G S

2N5582

Contextual Info: 2N5582 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5582J • JANTX level (2N5582JX)

2N5582

Abstract: 2N5582J 2N5582JV 2N5582JX
Contextual Info: 2N5582 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5582J • JANTX level (2N5582JX)

2N5585

Abstract: 2N5586 2N5584 2N5911 2N5912 NF5011 NPD5584 NPD5586 U440 U441
Contextual Info: This Material National Semiconductor N-ChanneIJFETs CO m Wide Band—Low Noise Dual JFETs n Copyrighted o Operating Conditions for these Characteristics Typ« No. By 2N5584 2N5585 2N5586 2N5911 2N5912 Op. Vqs1-2 Drift C tuC ruB V Gqu CMRR Vfl* Vp Gou loss Gf» GqicI-2 Iq H g 2 Process Pkg.