2N559 Search Results

2N5601

Abstract: 2N5597 2N5599 2N5603
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;

2N5591

Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_
Contextual Info: S G S-"THOMSON Q5C Q | ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:

2N5597

Abstract: 2N5601 2N5599 2N5603
Contextual Info: Inchange Semiconductor Product Specification 2N5597 2N5599 2N5601 2N5603 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;

2N5597

Abstract: 2N5599 2N5601 2N5603
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

2N5599

Contextual Info: 2N5599 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2N5597

Contextual Info: 2N5597 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

b25-12

Abstract: 2N5591 B25-12 transistor "Frequency Multipliers" 4 watt VHF MT-72 20W power transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5591/B25-12 Silicon NPN power VHF transistor 2N55591/B25-12 is designed for use 12.6 volt power amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.

Contextual Info: 2N5597 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

MRF212

Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413

2N5598

Contextual Info: 2N5598 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N5590

Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
Contextual Info: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY

2N5598

Abstract: 2N5600 2N5602 2N5604 5602 5604
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

2N5598

Abstract: 2N5600 2N5604 2N5602 5604
Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;

2N5539

Contextual Info: m m lC fO 2 140 C o m m e rc e Drive t f f l M o n tg o m ery vilfe, PA S G Tei; {215 8 3 1-3 840 18936- ." * * , ' 1 ' : ^ 2 N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.,230MHz FM MOBILE APPLICATIONS • FREQUENCY 175WH:-: » VO LTAfif. i.TSV « POW ER OUT

2N4071

Abstract: 2N6277 JANTXV 2N5626
Contextual Info: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*’ 2N5664*' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300

2N5600

Abstract: 2N5598 2N5602 2N5604 5602 5604
Contextual Info: Inchange Semiconductor Product Specification 2N5598 2N5600 2N5602 2N5604 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;

SDT69504

Abstract: 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333
Contextual Info: Device Type 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT3501 SDT3502 SDT3503 SDT3504 SDT3505 SDT3506 SDT3507 SDT3508 SDT3509 SDT3510 SDT3511 SDT3512 SDT3513 SDT3514 SDT3515 SDT3516 SDT3550 SDT3551 SDT3552 SDT3553 SDT3554 SDF3575

2n5430

Contextual Info: A POW ERHOUSE BIPOLAR VCE sat max VOLTS 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5604 100 2.0 30-90 1.0/5.0 0.85 2.0/0.2 *2N5606

B12-12

Abstract: 2N5590 B1212 MT-72 MT-72 package 32fl02
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5590/B12-12 Silicon NPN power VHF transistor 2N5590/B12-12 is designed for amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.

Contextual Info: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-213 TO-66 'c VOLTS AMPS hFE min/max V CE (sat) max VOLTS •c @ 'b A A 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200

Contextual Info: 2N5598 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157