2N284 Search Results

2N2844

Abstract: 2N2843
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3b755M OOflbbOS 1 | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA 3 Drain (Case) MAXIMUM RATINGS Sym bol V a lu s U n it Drain-Source V olta g e Rating VDS 30 V dc Drain-Gate V oltage Vd g 30 V dc Gate-Source V olta g e

Contextual Info: 2N2849-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)1.0

2N2841

Contextual Info: 2N2841 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2N2608

Abstract: 2N3329-32 2N3909 2N2843 2N2608CHP 2N2608JAN 2N2843CHP 2N3909CHP 2N284 p-channel jfet
Contextual Info: U & p-channel JFET B designed f o r . . . S ilic o n ix General Purpose Amplifiers and Attenuators TYPE PACKAGE P R IN C IP A L D E V IC E S Single Single Single TO-18 TO-72 Chip 2N 2608, 2N 2608JA N , 2N2843 2N3329-32, 2N3909, V C R 5 P 2N 2608C H P, 2 N2843CH P,

BC238BP

Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323

2n2848

Contextual Info: 2N2848 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)

2N2845

Contextual Info: 2N2845 HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2845 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for high speed switching applications at collector currents up to 500 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

2N2856

Abstract: a/TO111
Contextual Info: A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 fl 26C 00221 ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3

2n2847

Contextual Info: 2N2847 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).20ux @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

2SC1675L

Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

2N2844

Abstract: 2N2843 2N3329-32 2N2608 2N2608CHP 2N2608JAN 2N2843CHP 2N3909 2N3909CHP siliconix jfets
Contextual Info: 2N2844 2N2843 S p-channel JFETs designed fo r Siliconix . Performance Curves PC PD See Section 5 • Small-Signal Amplifiers B E N E F IT S • Low Supply Voltage Operation v GS off T ypically 1.2 V T O -1 8 See S e c tio n 7 • A B S O L U T E M A X IM U M R A T IN G S (25°C)

2N2843

Abstract: 2N2844
Contextual Info: M OTORCLA SC XSTRS/R F 15E D | b3b?aSM 00abbg5 ^ | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA MAXIMUM RATINGS Symbol Valus Unit Drain-Source Voltage Rating VDS 30 Vdc Drain-Gate Voltage Vd g 30 Vdc Gate-Source Voltage Vg S 30 Vdc Drain Current Id

um9c

Abstract: 2N2846 2N3648 2n2848 2N3734 2N2242 2N2368 2N2369 2N2369A 2N2410
Contextual Info: bl NPN METAL CAN «-V h FE at •c V CE V min ma mA V 15 15 15 15 30 5 4 4 4 5 40 20 40 40 30 120 40 120 120 120 10 10 10 10 150 1 1 1 1 10 15 40 40 , 40 40 6 15 20 20 20 4 5 6 5 5 30 40 50 25 40 150 120 150 — — 20 10 10 io 10 0.4 1 1 1 1 2N2784 2N2845

Contextual Info: 2N2845 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

2N2856

Contextual Info: COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3 2N2850 2N2850-1 2N2850-2 2N2850-3 2N2851 2N2851-1 2N2851-2 2N2851 -3 2N2852 2N2852-1 2N2852-2 2N2852-3 2N2853 2N2853-1 2N2853-2 2N2853 -3 2N2854 2N2854-1

Contextual Info: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152

2n2840

Contextual Info: <^£mi- 2onda.ctoi ^Pi ,fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2840 Silicon Unijunction Transistor absolute maximum ratings: (25°C) 300 50 2 30 35 -65 to+150 -65 to +175 Power Dissipation*

Contextual Info: 2N2845 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

2N4078

Abstract: 2n1649 2N2885 2n2888 2N5076 2N1648 2N1650 2N2101 2N2849-1 2N2850-2
Contextual Info: SÛUARE D CO/ GENERAL 3918590 flSSSSDfl üüaSGTl 1 GENERAL SEMICONDUCTOR 95D 02091 lr *2 - n •T -Z >b 'C f\ W DEVICE TYPE BVcEO PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 2N2849 2N2849-1 2N2SS0 2N2850*1 2N2B50-2 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S

2N2845

Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N2845 HIGH-SPEED SATURATED SWITCH D E S C R IP T IO N The 2N2845 is a silicon planar epitaxial NPN tran­ sistor in JedecTO -18 metal case. It is intended for high speed switching applications at collector cur­ rents up to 500 mA.

2N2844

Abstract: "P-Channel JFETs" 2N2609 2N2609CHP 2N2843 2N2609JAN 2N2844CHP 30VVDS 2N284
Contextual Info: 2N2844 2N2843 p-channel JFETs designed fo r S S ilic o n ix . Performance Curves PC PD See Section 5 • Small-Signal Amplifiers B EN EFIT S • Low Supply Voltage Operation v GS off Typically 1.2 V TO-18 See Section 7 •A B SO LU T E MAXIMUM RATIN GS (25°C)

250M

Abstract: 2N2848
Contextual Info: 2N2848 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)

2N2845

Abstract: 250M
Contextual Info: 2N2845 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

Contextual Info: 30E » rz 7 ^7 # • 7^237 Q031133 S ■ T-3>S-|3 SCS-THOMSON b IIC T « !_ 2N2845 S G S-THOMSON HIGH-SPEED SATURATED SWITCH DESCRIPTIO N The 2N2845 is a silicon planar epitaxial NPN trans­ istor in Jedec TO-18 metal case. It is intended for