FDU2N60C Search Results

FDU2N60C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDU2N60C		Fairchild Semiconductor	Transistor Mosfet N-CH 600V 1.9A 3I-PAK	Original	PDF	685.29KB	9

FDU2N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C	PDF
2N60C Abstract: fdu2n60c 305 marking code d-pak Contextual Info: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)	Original	FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FQU2N60C FQU2N60CTLTU FQU2N60CTU 2N60C fdu2n60c 305 marking code d-pak	PDF
Contextual Info: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low gate charge (typical 8.5 nC)	Original	FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C	PDF
FDU2N60C Abstract: N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U Contextual Info: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U	PDF
FDU2N60C Abstract: FQD2N60C FQU2N60C Contextual Info: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)	Original	FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C FQD2N60C FQU2N60C	PDF
fqu2n60c Contextual Info: FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS on = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar	Original	FQD2N60C FQU2N60C FQU2N60C	PDF
Contextual Info: TM FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)	Original	FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C	PDF