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    FQU2N60CTLTU Search Results

    FQU2N60CTLTU Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQU2N60CTLTU
    		Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF 736.61KB 9
    FQU2N60CTLTU_NL
    		Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF 736.61KB 9
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    FQU2N60CTLTU Price and Stock

    Fairchild Semiconductor Corporation

    Fairchild Semiconductor Corporation FQU2N60CTLTU

    Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FQU2N60CTLTU 5 1
    • 1 -
    • 10 -
    • 100 $0.44
    • 1000 $0.36
    • 10000 $0.32
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    FQU2N60CTLTU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N60C

    Abstract: fdu2n60c 305 marking code d-pak
    Contextual Info: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FQU2N60C FQU2N60CTLTU FQU2N60CTU 2N60C fdu2n60c 305 marking code d-pak PDF