2SK2029 Search Results

Contextual Info: 2SK2029-01 L, S FUJI POWER MOS-FET _ _ _ _ N-CHANNEL SILICON POWER MOS-FET -F A P - I I A S E R I E S O utline D raw ings • Features • Hi gh sp ee d s w itc h in g

2SK202

Abstract: 2SK2029-01L MOSFET 900V 3A
Contextual Info: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2029-01L

Contextual Info: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

hJST

Abstract: hjst 16 2SK2029-01L A2370 m777
Contextual Info: 2SK2029-01 L S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline D raw ings ¡F e a tu re s ►Hi: jh speed switching >Low on-resistanoe >Nc secondary breakdown »Low driving power ►Hi'jh voltage *Vc ; — + 3 0 V Guarantee ' Avalanche-proof

2SK2029-01L

Abstract: 2sk202
Contextual Info: 2SK2029-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features FAP-IIA SERIES Outline Drawings T-Pack S 1.32 +0.2 1.2 ±0.2 Applications 4.5 ±0.2 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 T-Pack(L) 0.9 ±0.3 High speed switching Low on-resistance No secondary breakdown

Contextual Info: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2029-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features FAP-IIA SERIES Outline Drawings T-Pack S 1.32 +0.2 1.2 ±0.2 Applications 4.5 ±0.2 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 T-Pack(L) 0.9 ±0.3 High speed switching Low on-resistance No secondary breakdown

2SK2771-01R

Abstract: 2sk2761 2SK2082
Contextual Info: 7 -M OSFET / Power MOSFETs J |^ j FAP-IIA ÿ ' J - X » 5£ FAP-IIA series Continued VBBS to (pulse) lo Device type Volte 2SK1983-01 2SK2029-01L, S 2SK1984-01MR 2SK1942-01 2SK2224-01R 2SK1945-01L, S 2SK1943-01 2SK1985-01MR 2SK1944-01 2SK2272-01R 2SK2082-01

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2SK2696

Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
Contextual Info: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

Contextual Info: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01

Contextual Info: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2SJ1334

Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Contextual Info: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

2sk2255-01mr

Abstract: 2SK2082 2SK194 2SK1941-01R
Contextual Info: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S

2SK2774

Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01

Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,

TO-220F15

Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
Contextual Info: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S