2SK332 Search Results

2SK3324

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and

2SK332

Contextual Info: _ . f » 2SK332 »JUU t « No. 9 56 9031 $ •*> y3 > N SANYO ' f&ÈWftTlàÈiçlSîh. DC 7 ” y 'f X -iBnS'C' . A bsolute Maximum R atin g s/T a=25°C u n it P U -f V • V — X H J Ï ff — |v . K U v i f VDSS Vgds V - h W,H Ig 10 mA XD 20 mA F u 'T V

D1411

Abstract: 2SK3322 2SK3322-S 2SK3322-ZJ 2SK3322-ZK MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE 2SK3322 TO-220AB MP-25 characteristics, and designed for high voltage 2SK3322-S TO-262 applications such as switching power supply, AC

2SK3324

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and

2SK3320

Contextual Info: 2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit: mm • Two devices in a ultra super mini five pins package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V

2SK3326

Abstract: 2SK3326 equivalent
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3326 Isolated TO-220 a low gate charge and excellent switching characteristics, and

2SK3322

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3322 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS on = 2.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 2.8A) Avalanche capability ratings

2SJ99

Abstract: 2SK354 2SK336 2sk3542 2SK356 2SK347 2SK354A 2SK353 2SK345 2sk351
Contextual Info: - 44 - m ? S £ tt m € ìà m & nu Ì i]/ K 2SK331 V * tt $ ft * (V) X I* (A) ft * P d /P c h g m Vg s (V) 100m (min) (max) V d s (A) (A) (V) (min) (max) V d s (V) (V) (V) C—MIC J N 1) -20 GDO 10m G 0.06m 1. 5m 10 2SK332 H # Diff J N D -40 GDS 10m G 0. 2/CH

Contextual Info: 2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications Unit: mm • Two devices in a ultra super mini five pins package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V

2SK3320

Contextual Info: 2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications • Unit: mm Two devices in a ultra super mini five pins package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V

2SK3321

Abstract: 2SK332
Contextual Info: TOSHIBA TENTATIVE 2SK3321 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3321 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS • • • Small Package High Input Impedance : Iq SS = —1 nA Max. (Vq s = —30 V)

2SK3325B

Abstract: MP-25ZK D1842 D18429EJ2V0DS00 2SK3325B-S19-AY 2SK3325B-ZK-E1-AY 2SK3325B-ZK-E2-AY MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK3320

Contextual Info: 2SK3320 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications • Unit: mm Two devices in a ultra super mini five pins package · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = −50 V

2SK3324

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and

2SK3322

Abstract: 2SK3322-S 2SK3322-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3322 is N channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power

SMD Transistors nc

Abstract: smd transistor QG SMD Transistor nc SMD SINGLE GATE 2SK3325 SMD Transistors 2sk3325
Contextual Info: Transistors IC SMD Type MOS Field Effect Transistor 2SK3325 TO-263 1 .2 7 -0+ 0.1.1 Features Low gate charge: Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low on-state resistance 0.1max +0.1 1.27-0.1 Avalanche capability ratings +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1

2SK3320

Contextual Info: TOSHIBA 2SK3320 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3320 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Two devices in a Ultra Super Mini five pins package |Yfs| = 15 mS (Typ.) High |Yfs| (VDS = 10 V, V o s = 0) High Breakdown Voltage VGDS = -5 0 V

D1843

Abstract: MP45F 2SK3326B-S17-AY 2sk3326b 2SK3326
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK3320

Contextual Info: TO SH IBA 2SK3320 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3320 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Two devices in a Ultra Super Mini five pins package |Yfs| = 15 mS (Typ.) High |Yfc| High Breakdown Voltage Super Low Noise

2SK3320

Contextual Info: 2SK3320 東芝電界効果トランジスタ シリコンNチャネル接合形 2SK3320 ○ 低周波低雑音増幅用 単位: mm • ウルトラスーパーミニ 5 端子 パッケージに 2 素子を内蔵 • 高|Yfs|のため高利得が得られます。

D1426

Abstract: 2SK3325 2SK3325-S 2SK3325-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3325 TO-220AB 2SK3325-S TO-262 2SK3325-ZJ TO-263

D1843

Abstract: 2SK3326B-S17-AY 2SK3326B 2sk3326 mosfet 4702 MP45F
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: Transistors IC SMD Type Product specification 2SK3325 TO-263 1 .2 7 -0+ 0.1.1 Features Low gate charge: Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low on-state resistance 0.1max +0.1 1.27-0.1 Avalanche capability ratings +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1

D1411

Abstract: 2SK3322 2SK3322-S 2SK3322-ZJ MP-25 2SK332
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low PART NUMBER PACKAGE gate charge and excellent switching characteristics, and designed