2SK353 Search Results

Contextual Info: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET

FR 309 diode

Contextual Info: 2SK3535-01 FUJI POWER MOSFET 200304 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern

2SK3534-01MR

Abstract: 2sk3534 NC110
Contextual Info: 2SK3534-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter

Contextual Info: 2SK3534-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

ON4030

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter

FR 309 diode

Abstract: 2sk353 2SK3535-01
Contextual Info: 2SK3535-01 FUJI POWER MOSFET 200304 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern

2SK3539G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage

K3538

Abstract: 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC
Contextual Info: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3538 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)

2SK3532

Abstract: 2SK3532-01MR
Contextual Info: 2SK3532-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2sk3537

Abstract: 2SK3537-01MR
Contextual Info: 2SK3537-01MR 200304 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2SK3535-01

Contextual Info: 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C

Contextual Info: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3538 Chopper Regulator, DC−DC Converter and Motor Drive Applications 単位: mm z Low drain−source ON resistance: RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance: |Yfs| = 7.0 S (typ.)

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • High-speed switching • Wide frequency band • Gate protection diode built-in ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na tin nc ue e/ d • High-speed switching

2SK3539

Contextual Info: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate-peotection diode built-in 0.9±0.1

k3538

Abstract: 2SK3538 "k3538"
Contextual Info: 2SK3538 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3538 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準) •

2SK3533-01

Contextual Info: 2SK3533-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

equivalent 2SK3531-01

Abstract: 2SK3531 2SK3531-01 2sk353
Contextual Info: 2SK3531-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3539

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band

2SK3530

Abstract: 2SK3530-01MR DSA00259476
Contextual Info: 2SK3530-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators